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Vishay N-Channel Power MOSFET SiSHA10DN-T1-GE3 30 A, 30 V, Enhancement Mode, 8-Pin PowerPAK 1212 Package
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 930μm |
| Length | 3.3mm |
| Model | SISHA10DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SiSHA10DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 34nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports a maximum continuous drain current of 30 A.
- Operates at a maximum drain-source voltage of 30 V.
- Enhancement mode N-channel transistor design for efficient switching.
- Low maximum drain-source resistance of 5 milliohms ensures minimal conduction loss.
- Maximum power dissipation rating of 39 W supports high-performance operation.
- Thermally rated for operation up to 150°C for robustness in demanding environments.
- Typical gate charge is 34 nC at gate-source voltage, enabling fast switching performance.
- Forward voltage of 1.2 V supports rapid switching without excessive losses.
Product Description
Vishay SiSHA10DN-T1-GE3 is a high-performance N-Channel Power MOSFET designed for industrial and electronic applications requiring efficient power switching. The device supports a continuous drain current of 30 A and a drain-source voltage rating of 30 V. Packaged in an 8-pin PowerPAK 1212 surface mount package, it provides compact, reliable mounting with excellent thermal performance.
This enhancement mode device features a low maximum drain-source resistance of 5 milliohms, minimizing conduction losses and improving overall circuit efficiency. With maximum power dissipation up to 39 W and a maximum operating temperature of 150°C, the SiSHA10DN-T1-GE3 is well suited for demanding commercial, industrial, and automotive environments.
The MOSFET offers a typical gate charge of 34 nC at gate-source voltage, which ensures rapid switching capabilities vital for high-frequency applications. With a forward voltage of 1.2 V, it maintains low loss switching behavior.
Additional specifications include a wide operating temperature range from -55°C to 150°C, making the device robust across diverse environmental conditions. The package dimensions are 3.3 mm in length and width with a height of 930 micrometers. The device is RoHS compliant and designed with TrenchFET® Gen IV technology for enhanced reliability.
Supports maximum continuous drain current of 30 A and drain-source voltage of 30 V. Enhancement mode N-channel MOSFET optimized for low Rds(on) of 5 mΩ. High maximum power dissipation at 39 W with operation up to 150°C. Compact 8-pin PowerPAK 1212 surface mount package dimensions: 3.3 mm × 3.3 mm × 0.93 mm.
Operates reliably between -55°C to 150°C for industrial and automotive uses. Typical gate charge of 34 nC and gate-source voltage tolerance of -16 V to +20 V. Forward voltage is 1.2 V for efficient switching. This Vishay Power MOSFET is ideal for power management in electronics, automotive systems, industrial control circuits, and electronic driving applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 30 A.
It operates at a maximum drain-source voltage of 30 V.
This MOSFET is packaged in an 8-pin PowerPAK 1212 surface mount package with dimensions of 3.3 mm x 3.3 mm x 0.93 mm.
The maximum power dissipation rating for this model is 39 W.
It can operate at a maximum temperature of 150°C.
The typical gate charge is 34 nC at gate-source voltage.
The forward voltage is 1.2 V, which supports efficient switching.
This MOSFET operates reliably between -55°C and 150°C.
The maximum drain-source resistance is 5 milliohms, ensuring minimal conduction loss.
It uses an enhancement mode N-channel design optimized for efficient switching.
The maximum gate-source voltage tolerance is -16 V to +20 V.
The country of origin for this model is India.
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