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Vishay Single P-Channel MOSFET 5.1 A, 60 V, 3-Pin IRFU9014PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Length | 6.22mm |
| Model | IRFU9014PBF |
| Mount Type | Surface, Through Hole |
| Maximum Operating Temperature | 150°C |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.5Ω |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Transistor Configuration | Single |
Key Features
- Offers a maximum continuous drain current of 5.1 A for moderate power applications.
- Handles a maximum drain-source voltage up to 60 V ensuring stability in circuits.
- Equipped with 3 pins for easy surface or through-hole mounting.
- Features low drain-source resistance of 0.5 ohms at 10 V gate drive.
- Gate charge of 12 nC typical at Vgs provides efficient switching performance.
- Power dissipation of 25 W allows the device to sustain heat under load conditions.
- Operates reliably in extreme temperatures ranging from -55°C to 150°C.
- Has a maximum gate-source voltage rating of 20 V to protect the device from gate damage.
Product Description
Vishay IRFU9014PBF is a high-performance single P-Channel power MOSFET tailored for power electronic circuits requiring efficient switching and durability. It supports a maximum continuous drain current of 5.1 A and a maximum drain-source voltage of 60 V, making it suitable for moderate power applications in industrial, automotive, and consumer electronics.
The transistor is housed in DPAK (TO-252) and IPAK (TO-251) packages, offering versatile mounting options including surface mount and through-hole. It features a low on-resistance of 0.5 ohms at 10 V gate drive, ensuring minimal power loss and heat generation during operation. The typical gate charge of 12 nC at Vgs contributes to fast switching capabilities, optimizing efficiency in power management systems.
Designed for robust performance, this MOSFET operates reliably across a wide temperature range from -55°C to 150°C and can tolerate a maximum gate-source voltage of 20 V. Its single transistor configuration simplifies integration in discrete semiconductor applications.
This product finds applications in various domains such as industrial electronics, power supply design, automotive electronics, HVAC systems, and general electronic component assemblies requiring reliable and efficient MOSFET devices.
Maximum continuous drain current of 5.1 A supports diverse electronic applications. Maximum drain-source voltage of 60 V ensures device robustness under high voltage conditions. Surface and through-hole mount types facilitate flexible PCB design.
Low drain-source resistance reduces conduction losses in circuits. Fast switching enabled by typical 12 nC gate charge at Vgs. Power dissipation rating of 25 W maintains device integrity during load. Wide temperature operating range (-55°C to 150°C) for harsh environments.
Maximum gate-source voltage of 20 V protects gate terminal. Single element per chip providing straightforward circuit design. Manufactured in China ensuring quality standards compliance. Explore more products in the Discrete Semiconductors category at EnvMart for comprehensive electronic component solutions.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5.1 A, making it suitable for moderate power applications.
It has a maximum drain-source voltage rating of 60 V, ensuring stability in high voltage conditions.
This model supports both surface mount and through-hole mounting types, providing flexibility in PCB design.
The typical gate charge is 12 nC at Vgs, which contributes to its efficient switching performance.
It has a power dissipation rating of 25 W, allowing it to sustain heat under load conditions.
The MOSFET operates reliably across a temperature range from -55°C to 150°C, suitable for harsh environments.
The maximum gate-source voltage rating is 20 V, which helps protect the device from gate damage.
This model is equipped with 3 pins, facilitating easy integration into circuits.
It features a P-channel configuration, which is typical for certain power applications.
The maximum drain-source resistance is 0.5 ohms at a 10 V gate drive, minimizing power loss during operation.
This MOSFET has a single element per chip, simplifying circuit design.
This model is manufactured in China, ensuring compliance with quality standards.
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