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onsemi Darlington Transistor PNP 8A 100V, HFE 100, 3-Pin DPAK MJD127G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model MJD127G
Mount Type Surface
Series MJD122
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 8A
Maximum Collector Emitter Voltage Vceo 100V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 100V
Maximum Collector Cut-off Current 0.01mA
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
onsemi MJD127G 1 Darlington Transistor PNP, 8 A 100 V HFE 100, 3-Pin DPAK

Key Features

  • This transistor supports a maximum continuous collector current of 8 amperes.
  • It has a maximum collector-emitter voltage rating of 100 volts.
  • The device features a minimum DC current gain (hFE) of 100 for efficient amplification.
  • Designed in TO-252 package type with surface mount capability.
  • Operates reliably in temperatures ranging from -65°C to 150°C.
  • Maximum power dissipation capacity of 20 watts ensures robust operation.
  • The transistor polarity is PNP type suitable for various applications.
  • Includes automotive standard AEC-Q101 qualification for high reliability.

Product Description

The onsemi MJD127G is a PNP Darlington transistor designed for power applications, featuring a maximum continuous collector current of 8 amps and a collector-emitter voltage of 100 volts. Housed in a compact 3-Pin DPAK (TO-252) package, this transistor offers efficient performance with a minimum DC current gain of 100, ensuring excellent amplification capabilities.

Its robust design supports a maximum power dissipation of 20 watts and can operate across a wide temperature range from -65°C to 150°C. The device also features maximum voltages including VCBO of 100V, VBE of 5V, and VCE saturation voltage of 2V, making it suitable for various electronic circuits requiring power control and switching.

The MJD127G complies with the automotive AEC-Q101 standard, highlighting its reliability for automotive and industrial applications. Its surface mount TO-252 package facilitates easy integration in compact printed circuit boards, while the small size of 6.73 mm length and 2.38 mm height allows for space-efficient designs.

This transistor is ideal for use in industrial electronics, power management circuits, and automotive control systems where precise and reliable switching is required. It provides excellent current gain and power management, making it a versatile component for engineers and designers.

Supports 8A continuous collector current for high power applications. Maximum collector-emitter voltage of 100V ensures robust operation. High DC current gain of 100 enhances signal amplification performance. Surface mount TO-252 package facilitates compact PCB designs.

Wide operating temperature range from -65°C to 150°C suitable for harsh environments. Power dissipation rating of 20W for reliable thermal handling. Automotive standard AEC-Q101 qualification certifies quality and durability.

Compact dimensions optimize board space and design flexibility. PNP transistor polarity for specific circuitry requirements.

This onsemi Darlington Transistor MJD127G is a dependable choice for applications in electronics, automotive, industrial control, and power regulation fields. Browse more semiconductors and transistors from trusted brands at EnvMart.

onsemi Darlington Transistor PNP 8A 100V, HFE 100, 3-Pin DPAK MJD127G
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Frequently Asked Questions

The maximum continuous collector current for the MJD127G is 8 amperes.

This model has a maximum collector-emitter voltage rating of 100 volts.

The minimum DC current gain (hFE) of this transistor is 100.

The dimensions of the TO-252 package are 6.73 mm in length and 2.38 mm in height.

The MJD127G has a maximum power dissipation capacity of 20 watts.

It operates reliably in temperatures ranging from -65°C to 150°C.

This transistor has a PNP polarity, suitable for various applications.

The MJD127G complies with the automotive standard AEC-Q101, ensuring high reliability.

This model features a 3-pin configuration.

The maximum emitter-base voltage (VEBO) is 5 volts.

The maximum collector cut-off current is 0.01 mA.

It is suitable for use in industrial electronics, power management circuits, and automotive control systems.

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