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Renesas Electronics Darlington Transistor NPN, 4A Continuous Collector Current, 80V Collector Emitter Voltage, HFE BD679

Category Darlington Transistor Brand Renesas Electronics Condition New

Specifications

Country of Origin India
Brand Renesas Electronics
Height 10.8mm
Length 7.8mm
Model BD679
Mount Type Through Hole
Series BD679
Maximum Operating Temperature 150°C
Package Type SOT-32
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 4A
Maximum Collector Emitter Voltage Vceo 80V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 750
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V
Maximum Collector Base Voltage VCBO 80V
Maximum Collector Cut-off Current 0.2mA
Magnatec BD679 NPN Darlington Pair, 4 A 80 V HFE 750, 3-Pin SOT-32Brand: Magnatec
Renesas Electronics 1 Darlington Transistor NPN, 4 A 80 V HFE 750, 3-Pin SOT-32

Key Features

  • Maximum Continuous Collector Current of 4 A suitable for power amplification.
  • High DC Current Gain (hFE) of 750 for efficient switching applications.
  • 3-pin SOT-32 package with through-hole mount type for robust PCB integration.
  • Wide operating temperature range from -65°C to 150°C ensuring reliability in harsh environments.
  • Maximum Emitter Base Voltage of 5 V and Collector Base Voltage of 80 V for stable operation.
  • Maximum Collector Emitter Saturation Voltage of 2.5 V to minimize power loss during conduction.
  • NPN transistor polarity designed for various electronic component applications.

Product Description

Renesas Electronics BD679 Darlington Transistor NPN is a high-performance discrete semiconductor device designed for power amplification and switching applications in electronic circuits. It has a maximum continuous collector current of 4 Amps and a collector emitter voltage rating of 80 Volts making it well suited for high current and voltage handling duties.

The device features a high DC current gain (hFE) of 750, ensuring efficient transistor operation with minimal input current. The transistor is housed in a 3-pin SOT-32 package, facilitating easy through-hole mount installation on printed circuit boards.

Designed to operate reliably across a wide temperature range from -65°C to 150°C, the BD679 excels in industrial, automotive, and consumer electronics applications where temperature variations are common. It provides robust electrical characteristics including a maximum emitter base voltage of 5 V, a collector base voltage of 80 V, and a low collector emitter saturation voltage of 2.5 V, reducing power dissipation during switching.

This NPN transistor’s compact dimensions (10.8 mm height and 7.8 mm length) aid in integrating into space-constrained electronic designs. As a new product from Renesas Electronics, BD679 is a trusted choice for designers requiring reliable Darlington pairs for amplification and switching.

Maximum Continuous Collector Current of 4 A ensures high power handling. High DC Current Gain (hFE) of 750 provides effective signal amplification. Through-hole mount 3-pin SOT-32 package facilitates robust PCB assembly.

Wide operating temperature range (-65°C to 150°C) for diverse environments. Low Collector Emitter Saturation Voltage minimizes conduction losses. Suitable for industrial, automotive, and electronic component applications.

Compact size optimizes board space utilization. Explore more Darlington Transistors and discrete semiconductor components in the Electronics & Electricals category on EnvMart.

Renesas Electronics Darlington Transistor NPN, 4A Continuous Collector Current, 80V Collector Emitter Voltage, HFE BD679
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