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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | BCV49,115 |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | UPAK |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 500mA |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 2000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V |
| Maximum Collector Base Voltage VCBO | 80V |
| Maximum Collector Cut-off Current | 0.0001mA |
| Maximum Power Dissipation Pd | 1.3W |
| Nexperia BCV49,115 1 Darlington Transistor NPN, 500 mA 60 V HFE | 2000, 4-Pin UPAK |
Nexperia BCV49,115 is a high-gain Darlington transistor designed for electronic components and power applications. Featuring an NPN configuration, it supports a maximum continuous collector current of 500 mA and can withstand collector emitter voltages up to 60 V. The device is housed in a compact 4-pin UPAK surface mount package, making it suitable for space-constrained PCB designs.
This transistor offers a minimum DC current gain (hFE) of 2000, which ensures efficient signal amplification and switching capabilities in varied circuits. With a power dissipation rating of 1.3 W, it can handle moderate loads and is stable across a broad operating temperature range from -65°C to 150°C, making it suitable for industrial, commercial, and laboratory electronics usage.
The maximum collector base voltage of 80 V and the emitter base voltage of 10 V provide robust protection against transistor breakdown under high voltage conditions. The maximum collector emitter saturation voltage of 1 V reduces power losses during switching. This transistor is ideal for amplification and switching applications requiring reliability and high gain without automotive certification requirements.
The package dimensions with a height of 1.6 mm and length of 4.6 mm allow for surface mounting on printed circuit boards, supporting modern automated manufacturing processes. The BCV49,115 transistor is an excellent choice for enhancing circuit efficiency in power supply circuits, amplification stages, and other semiconductor discrete applications.
Maximum continuous collector current of 500 mA ensures robust operation. Collector emitter voltage rating of 60 V for versatile applications. High minimum DC current gain (hFE) of 2000 for efficient amplification. Power dissipation capacity of 1.3 W supports moderate power handling.
NPN transistor polarity suitable for switching and amplification tasks. Operating temperature range from -65°C to 150°C for reliable performance. Compact 4-pin UPAK surface mount package with 1.6 mm height and 4.6 mm length.
Maximum collector base voltage of 80 V and emitter base voltage of 10 V. Maximum collector saturation voltage of 1 V to optimize switching losses. Designed without automotive standards, ideal for general electronics projects.
Explore the full range of Darlington Transistors and discrete semiconductors at EnvMart for advanced electronic design and manufacturing.
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