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Nexperia Darlington Transistor NPN 500 mA 60 V 1.3 W Power Dissipation 4-Pin UPAK BCV49,115

Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.6mm
Length 4.6mm
Model BCV49,115
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type UPAK
Minimum Operating Temperature -65°C
Pin Count 4
Maximum Continuous Collector Current Ic 500mA
Maximum Collector Emitter Voltage Vceo 60V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 2000
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Emitter Saturation Voltage VceSAT 1V
Maximum Collector Base Voltage VCBO 80V
Maximum Collector Cut-off Current 0.0001mA
Maximum Power Dissipation Pd 1.3W
Nexperia BCV49,115 1 Darlington Transistor NPN, 500 mA 60 V HFE 2000, 4-Pin UPAK

Key Features

  • Maximum continuous collector current of 500 mA ensures robust operation.
  • Collector emitter voltage rating of 60 V for versatile applications.
  • High minimum DC current gain (hFE) of 2000 for efficient amplification.
  • Power dissipation capacity of 1.3 W supports moderate power handling.
  • NPN transistor polarity suitable for switching and amplification tasks.
  • Operating temperature range from -65°C to 150°C for reliable performance.
  • Compact 4-pin UPAK surface mount package with 1.6 mm height and 4.6 mm length.
  • Maximum collector base voltage of 80 V and emitter base voltage of 10 V.

Product Description

Nexperia BCV49,115 is a high-gain Darlington transistor designed for electronic components and power applications. Featuring an NPN configuration, it supports a maximum continuous collector current of 500 mA and can withstand collector emitter voltages up to 60 V. The device is housed in a compact 4-pin UPAK surface mount package, making it suitable for space-constrained PCB designs.

This transistor offers a minimum DC current gain (hFE) of 2000, which ensures efficient signal amplification and switching capabilities in varied circuits. With a power dissipation rating of 1.3 W, it can handle moderate loads and is stable across a broad operating temperature range from -65°C to 150°C, making it suitable for industrial, commercial, and laboratory electronics usage.

The maximum collector base voltage of 80 V and the emitter base voltage of 10 V provide robust protection against transistor breakdown under high voltage conditions. The maximum collector emitter saturation voltage of 1 V reduces power losses during switching. This transistor is ideal for amplification and switching applications requiring reliability and high gain without automotive certification requirements.

The package dimensions with a height of 1.6 mm and length of 4.6 mm allow for surface mounting on printed circuit boards, supporting modern automated manufacturing processes. The BCV49,115 transistor is an excellent choice for enhancing circuit efficiency in power supply circuits, amplification stages, and other semiconductor discrete applications.

Maximum continuous collector current of 500 mA ensures robust operation. Collector emitter voltage rating of 60 V for versatile applications. High minimum DC current gain (hFE) of 2000 for efficient amplification. Power dissipation capacity of 1.3 W supports moderate power handling.

NPN transistor polarity suitable for switching and amplification tasks. Operating temperature range from -65°C to 150°C for reliable performance. Compact 4-pin UPAK surface mount package with 1.6 mm height and 4.6 mm length.

Maximum collector base voltage of 80 V and emitter base voltage of 10 V. Maximum collector saturation voltage of 1 V to optimize switching losses. Designed without automotive standards, ideal for general electronics projects.

Explore the full range of Darlington Transistors and discrete semiconductors at EnvMart for advanced electronic design and manufacturing.

Nexperia Darlington Transistor NPN 500 mA 60 V 1.3 W Power Dissipation 4-Pin UPAK BCV49,115
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