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DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W E-Line 3-Pin Through Hole ZTX605

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DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W E-Line 3-Pin Through Hole ZTX605

Name: DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W E-Line 3-Pin Through Hole ZTX605
Brand: DiodesZetex
SKU: 178598

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Category Darlington Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	4.01mm
Length	4.77mm
Model	ZTX605
Mount Type	Through Hole
Series	ZTX605
Maximum Operating Temperature	200°C
Package Type	E-Line
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	1A
Maximum Collector Emitter Voltage Vceo	120V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	500
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	10V
Maximum Collector Base Voltage VCBO	140V
Maximum Collector Cut-off Current	0.00001mA
Maximum Power Dissipation Pd	1W
DiodesZetex ZTX605 1 Darlington Transistor NPN, 1 A 120 V HFE	500, 3-Pin E-Line

Key Features

This NPN Darlington transistor supports a minimum DC current gain (hFE) of 500.
The device dissipates a maximum power of 1 watt with through-hole mounting.
It features a maximum emitter base voltage of 10 volts and collector base voltage of 140 volts.
The transistor operates reliably within temperatures from -55°C to 200°C.
Its compact dimensions are approximately 4.77 mm length and 4.01 mm height.
Designed for use in discrete semiconductor applications and power switching circuits.
Non-automotive grade component suitable for electronic circuitry requiring high gain and moderate voltage ratings.

Product Description

The DiodesZetex ZTX605 is a high-gain NPN Darlington transistor designed for various electronic applications. This device provides a continuous maximum collector current of 1 ampere and can withstand a collector emitter voltage up to 120 volts.

Featuring a minimum DC current gain of 500, the transistor ensures efficient signal amplification, suitable for switching and amplification tasks in discrete semiconductor circuits. Its through-hole mounting within an E-Line 3-pin package simplifies installation in standard PCBs.

Thermal specifications allow operation within a broad temperature range from -55°C to 200°C, making it reliable for diverse industrial environments. The maximum power dissipation is rated at 1 watt, with a maximum emitter base voltage of 10 volts and collector base voltage of 140 volts.

The compact form factor, with a length of 4.77 mm and height of 4.01 mm, supports versatile design integration. This transistor is ideal for electronic power control, signal amplification, and switching applications in industrial, laboratory, and manufacturing sectors.

This NPN Darlington Transistor supports a minimum DC current gain (hFE) of 500. It operates with a collector emitter voltage up to 120 V and collector current of 1 A. Utilizes a 3-pin E-Line through-hole package suitable for PCB mounting.

Temperature range from -55°C to 200°C ensures operational reliability. Maximum power dissipation of 1 W enables moderate power applications. Compact dimensions allow integration into space-constrained electronic systems.

Suitable for switching and amplification in discrete semiconductor designs.

This DiodesZetex ZTX605 transistor is an essential component for engineers and designers engaged in power electronics, signal control, and discrete electronic assemblies. Its reliable specs and high current gain make it a preferred choice for a variety of electrical and industrial applications.

Explore EnvMart’s extensive catalog for more semiconductor devices and components tailored for modern electronic designs and manufacturing needs.