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DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W E-Line 3-Pin Through Hole ZTX605
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 4.01mm |
| Length | 4.77mm |
| Model | ZTX605 |
| Mount Type | Through Hole |
| Series | ZTX605 |
| Maximum Operating Temperature | 200°C |
| Package Type | E-Line |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 120V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 500 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 10V |
| Maximum Collector Base Voltage VCBO | 140V |
| Maximum Collector Cut-off Current | 0.00001mA |
| Maximum Power Dissipation Pd | 1W |
| DiodesZetex ZTX605 1 Darlington Transistor NPN, 1 A 120 V HFE | 500, 3-Pin E-Line |
Key Features
- This NPN Darlington transistor supports a minimum DC current gain (hFE) of 500.
- The device dissipates a maximum power of 1 watt with through-hole mounting.
- It features a maximum emitter base voltage of 10 volts and collector base voltage of 140 volts.
- The transistor operates reliably within temperatures from -55°C to 200°C.
- Its compact dimensions are approximately 4.77 mm length and 4.01 mm height.
- Designed for use in discrete semiconductor applications and power switching circuits.
- Non-automotive grade component suitable for electronic circuitry requiring high gain and moderate voltage ratings.
Product Description
The DiodesZetex ZTX605 is a high-gain NPN Darlington transistor designed for various electronic applications. This device provides a continuous maximum collector current of 1 ampere and can withstand a collector emitter voltage up to 120 volts.
Featuring a minimum DC current gain of 500, the transistor ensures efficient signal amplification, suitable for switching and amplification tasks in discrete semiconductor circuits. Its through-hole mounting within an E-Line 3-pin package simplifies installation in standard PCBs.
Thermal specifications allow operation within a broad temperature range from -55°C to 200°C, making it reliable for diverse industrial environments. The maximum power dissipation is rated at 1 watt, with a maximum emitter base voltage of 10 volts and collector base voltage of 140 volts.
The compact form factor, with a length of 4.77 mm and height of 4.01 mm, supports versatile design integration. This transistor is ideal for electronic power control, signal amplification, and switching applications in industrial, laboratory, and manufacturing sectors.
This NPN Darlington Transistor supports a minimum DC current gain (hFE) of 500. It operates with a collector emitter voltage up to 120 V and collector current of 1 A. Utilizes a 3-pin E-Line through-hole package suitable for PCB mounting.
Temperature range from -55°C to 200°C ensures operational reliability. Maximum power dissipation of 1 W enables moderate power applications. Compact dimensions allow integration into space-constrained electronic systems.
Suitable for switching and amplification in discrete semiconductor designs.
This DiodesZetex ZTX605 transistor is an essential component for engineers and designers engaged in power electronics, signal control, and discrete electronic assemblies. Its reliable specs and high current gain make it a preferred choice for a variety of electrical and industrial applications.
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Frequently Asked Questions
The maximum continuous collector current for this model is 1 ampere.
The ZTX605 can withstand a maximum collector-emitter voltage of 120 volts.
It supports a minimum DC current gain (hFE) of 500.
This transistor operates reliably within a temperature range of -55°C to 200°C.
The compact dimensions of this model are approximately 4.77 mm in length and 4.01 mm in height.
It features a through-hole mounting type in an E-Line 3-pin package.
The maximum power dissipation for this transistor is rated at 1 watt.
The maximum emitter-base voltage for this model is 10 volts.
It is designed for use in discrete semiconductor applications, including power switching circuits and signal amplification.
The maximum collector-base voltage is 140 volts.
This model has a pin count of 3.
The country of origin for this transistor is India.
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