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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | TIP112 |
| Mount Type | Through Hole |
| Series | TIP112 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 2A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 500 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 1mA |
| Maximum Power Dissipation Pd | 50W |
| STMicroelectronics 1 Darlington Transistor NPN, 2 A 100 V HFE | 500, 3-Pin TO-220 |
STMicroelectronics TIP112 is a high-quality NPN Darlington transistor designed for power amplification and switching applications. It offers a maximum continuous collector current of 2 Amps and can withstand collector-emitter voltages up to 100 Volts. The transistor is encased in a reliable TO-220 package with a 3-pin through-hole mount, facilitating easy integration into electronic circuits.
This component exhibits a minimum DC current gain (hFE) of 500, providing high amplification capability suitable for driving medium-power loads. The maximum power dissipation of 50 Watts ensures its robustness in industrial and electronic device uses. Operating temperature range from -65°C to 150°C makes it suitable for harsh environmental conditions.
The TIP112 transistor features a maximum emitter-base voltage of 5 Volts and a maximum collector cut-off current of 1 mA. Its saturation voltage is capped at 2.5 Volts, optimizing switching efficiency in various applications. The compact physical size, measuring 10.4mm in length and 9.15mm in height, supports use in space-constrained designs.
Typical applications include power amplifiers, motor drivers, relay drivers, and other switching circuits in industrial, laboratory, communication, and manufacturing environments. The high gain and voltage tolerance make it ideal for robust electronic system designs requiring reliable performance.
Supports maximum continuous collector current of 2 Amps. Maximum collector-emitter voltage rating of 100 Volts. High gain with DC current gain (hFE) of minimum 500. Robust TO-220 package with through-hole mount type. Maximum power dissipation rated at 50 Watts.
Operates in temperature range from -65°C to 150°C. Designed with 3-pin configuration for easy PCB mounting. NPN transistor polarity suitable for various amplification applications. Maximum collector emitter saturation voltage of 2.5 Volts ensures efficient switching.
Compact dimensions of 10.4mm length and 9.15mm height enable versatile placement. Shop with confidence for the STMicroelectronics TIP112 Darlington Transistor at EnvMart, your industrial electronics supplies partner.
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