STMicroelectronics Darlington PNP Transistor 8 A 100 V TO-252 Surface Mount 3-Pin MJD127T4

STMicroelectronics MJD127T4 is a high-performance Darlington PNP transistor designed for power amplification and switching applications. It supports a maximum continuous collector current of 8 A and a maximum collector-emitter voltage of 100 V, making it suitable for demanding electronic circuits.

This transistor is packaged in a TO-252 surface mount format with 3 pins, allowing easy integration into compact PCB designs. Its minimum DC current gain (hFE) of 100 ensures strong amplification with efficient power handling up to 20 W.

The device operates over a wide temperature range from -65°C to 150°C, suitable for industrial and automotive environments that require reliable performance under temperature stress. Key electrical ratings include a maximum emitter-base voltage of 5 V and low saturation voltage of 2 V, which contribute to efficient switching and reduced power losses.

This transistor provides a minimum DC current gain (hFE) of 100. Maximum power dissipation is rated at 20 W for reliable operation. Designed for surface mounting with a compact 3-pin TO-252 package. Operating temperature ranges from -65°C to 150°C, suitable for harsh environments.

Collector-emitter saturation voltage is a low 2 V for efficient switching. Emitter-base voltage maximum rating is 5 V, ensuring robust performance. Maximum collector cut-off current is only 0.01 mA, minimizing leakage. Ideal for power amplification and switching applications in electronic circuits.

Durable construction with a height of 2.4 mm and length of 6.6 mm. MJD127 series transistor designed by STMicroelectronics for high-performance electronic applications. This product is well-suited for industrial, automotive, and general electronics uses where high current gain, stable operation, and compact packaging are required.

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