STMicroelectronics Darlington Transistor PNP 10 A 100 V 90 W TO-220 TIP147T

STMicroelectronics TIP147T is a PNP Darlington transistor designed for high current and voltage electronic applications. This transistor supports a maximum continuous collector current of 10 A and a collector emitter voltage rating of 100 V, making it suitable for power amplification and switching tasks.

The TIP147T is housed in a TO-220 package, enabling easy mounting through holes on printed circuit boards. Featuring a high DC current gain (hFE) of 500, it efficiently amplifies current while maintaining low saturation voltages. The transistor's maximum power dissipation is 90 W, supporting robust performance in demanding industrial and electronic circuits.

This device operates reliably across a broad temperature range from -65°C to 150°C, making it adaptable to various environmental conditions. The transistor's low collector emitter saturation voltage of 2 V reduces power loss during conduction, enhancing overall system efficiency.

The TIP147T has 3 pins and is classified as PNP polarity, suitable for positive to negative switching configurations in power control circuits. It also features a maximum emitter base voltage of 5 V and a collector base voltage of 100 V.

Commonly applied in industrial electronics, power supplies, audio amplifiers, and motor control circuits, the TIP147T offers precise switching and amplification performance. It does not conform to any specific automotive standards but ensures high-quality performance in standard electronics assemblies.

This Darlington transistor features a high DC current gain of 500. The transistor is designed with a TO-220 package for through-hole mounting. It has a maximum collector emitter saturation voltage of 2 V ensuring efficient switching.

Operational temperature range extends from -65°C to 150°C for robust performance. The device includes 3 pins and is PNP polarity type suited for power applications. Maximum power dissipation is rated at 90 W, suitable for high power electronic projects.

The transistor has maximum base emitter voltage of 5 V and collector base voltage of 100 V. High reliability with 1 mA maximum collector cut-off current. Explore more semiconductor devices and Darlington Transistors from STMicroelectronics at EnvMart to support your industrial, laboratory, and electronic design projects.