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Nexperia Bipolar Transistor 4 A NPN 45 V 3-Pin DPAK Surface Mount TO-252 Package MJD148-QJ

Category Bipolar Transistor Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model MJD148-QJ
Mount Type Surface
Series MJD148-Q
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 4A
Transistor Configuration NPN

Key Features

  • This transistor has a maximum DC collector current of 4 amperes.
  • It supports a maximum collector emitter voltage of 45 volts.
  • The transistor package type is TO-252 (DPAK) surface mount.
  • Minimum DC current gain (hFE) is 40, ensuring strong amplification performance.
  • It features fast switching speeds with a low collector emitter saturation voltage.
  • Designed to operate over a wide temperature range from -55°C to 150°C.
  • It is compliant with RoHS standards and AEC-Q101 automotive qualification.
  • The device has 3 pins allowing easy integration into surface mount applications.

Product Description

Nexperia MJD148-QJ bipolar transistor is a high-power NPN discrete semiconductor designed for efficient switching and amplification in automotive and industrial applications. The device features a maximum DC collector current of 4 amperes and a maximum collector emitter voltage of 45 volts, making it suitable for higher current circuits. Packaged in a TO-252 (DPAK) surface mount package with 3 pins, it enables effective thermal dissipation and compact PCB layouts.

This transistor provides a minimum DC current gain (hFE) of 40, ensuring reliable amplification performance. It operates efficiently across a wide temperature range from -55°C up to 150°C, supporting harsh environmental conditions often encountered in automotive and industrial sectors.

With low collector emitter saturation voltage and fast switching speeds, it offers energy-efficient performance, reducing power loss and heat generation. The MJD148-QJ is compliant with RoHS environmental standards and meets the automotive standard AEC-Q101 qualification, confirming its suitability for automotive electronics.

Typical applications include power amplification, switching circuits, and general-purpose amplification in automotive electronic systems, industrial control equipment, and related semiconductor solutions.

Maximum DC collector current of 4 A provides high current handling capability. Maximum collector emitter voltage of 45 V supports robust voltage operation. TO-252 (DPAK) surface mount package offers compact and efficient mounting.

Fast switching speeds enhance overall circuit performance. Wide operating temperature range from -55°C to 150°C enables use in demanding environments. RoHS compliant and automotive qualified per AEC-Q101 standard. Electrically similar to the popular MJD148 series transistors.

Designed for power dissipation and heat management in compact form factor.

This Bipolar Transistor is ideal for industrial, automotive, and power electronic use cases requiring reliable and efficient semiconductor components. Explore more power transistor solutions and semiconductor products to meet your electronics design needs at EnvMart.

Nexperia Bipolar Transistor 4 A NPN 45 V 3-Pin DPAK Surface Mount TO-252 Package MJD148-QJ
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Frequently Asked Questions

The maximum DC collector current for the MJD148-QJ transistor is 4 amperes.

This transistor supports a maximum collector-emitter voltage of 45 volts.

The MJD148-QJ is packaged in a TO-252 (DPAK) surface mount package.

The minimum DC current gain (hFE) for this model is 40, ensuring reliable amplification performance.

It operates efficiently over a wide temperature range from -55°C to 150°C.

Yes, it is compliant with RoHS standards and meets the AEC-Q101 automotive qualification.

The MJD148-QJ features 3 pins, allowing for easy integration into surface mount applications.

This model has an NPN transistor polarity.

The maximum emitter-base voltage (VEBO) is 6 volts.

Typical applications include power amplification, switching circuits, and general-purpose amplification in automotive electronic systems and industrial control equipment.

The MJD148-QJ meets the AEC-Q101 automotive standard, confirming its suitability for automotive electronics.

The country of origin for this transistor is India.

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