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DiodesZetex Isolated 2 N-Channel MOSFET, 8.6 A, 20 V Enhancement, 8-Pin TSSOP DMN2016UTS-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.025mm |
| Length | 4.5mm |
| Model | DMN2016UTS-13 |
| Width | 3.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | TSSOP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, MIL-STD-202, RoHS, UL 94V-0, AEC-Q101 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.6A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 16.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 880mW |
| Typical Gate Charge Qg @ Vgs | 16.5nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 0.65V |
| Transistor Configuration | Isolated |
Key Features
- Enhanced N-channel MOSFET with isolated transistor configuration.
- Maximum power dissipation of 880 mW supports efficient thermal management.
- Wide operating temperature range from -55°C to +150°C.
- Low maximum drain-source resistance Rds(on) of 16.5 mΩ reduces power loss.
- Compact 8-pin TSSOP surface mount package dimensions.
- Typical gate charge 16.5 nC for fast switching applications.
- Automotive standard AEC-Q101 certification for reliable use.
- Compliant with J-STD-020, MIL-STD-202, RoHS, and UL 94V-0 safety standards.
Product Description
DiodesZetex DMN2016UTS-13 is an isolated dual N-channel MOSFET designed for high performance in electronic and power applications. It features a maximum continuous drain current of 8.6 A and a maximum drain-source voltage of 20 V, making it suitable for efficient switching and amplification tasks in circuits requiring reliable power handling.
This MOSFET comes in an 8-pin TSSOP surface mount package with compact dimensions of 4.5 mm length, 3.1 mm width, and a height of 1.025 mm, supporting modern miniaturized PCB layouts.
The device operates under a wide temperature range from -55°C to +150°C, suitable for use in automotive, industrial, and harsh environment applications. It has a low on-resistance of 16.5 mΩ and a typical gate charge of 16.5 nC, enabling energy-efficient switching with minimal heat dissipation.
The transistor is enhancement mode type with isolated configuration, ensuring robust electrical isolation and ease of integration in complex circuits. The maximum power dissipation rating is 880 mW to support moderate load conditions.
This MOSFET complies with several industry standards including J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and adheres to the automotive AEC-Q101 qualification, confirming high reliability and quality for automotive electronics.
Enhanced N-channel MOSFET with isolated transistor configuration. Maximum power dissipation of 880 mW supports efficient thermal management. Wide operating temperature range from -55°C to +150°C. Low maximum drain-source resistance Rds(on) of 16.5 mΩ reduces power loss.
Compact 8-pin TSSOP surface mount package dimensions. Typical gate charge 16.5 nC for fast switching applications. Automotive standard AEC-Q101 certification for reliable use. Compliant with J-STD-020, MIL-STD-202, RoHS, and UL 94V-0 safety standards.
This MOSFET is highly suited for applications in automotive, industrial electronics, power management in consumer electronics, and embedded systems, offering robust performance under variable temperature and power conditions. Available in a compact footprint, the DMN2016UTS-13 allows designers to optimize PCB space without compromising electrical performance.
Explore more semiconductor solutions and advanced MOSFETs in the Electronics & Electricals category at EnvMart for reliable and efficient electronic component sourcing.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.6 A.
This MOSFET has a maximum drain-source voltage rating of 20 V.
The maximum power dissipation rating is 880 mW, which supports efficient thermal management.
The maximum drain-source resistance (Rds(on)) is 16.5 mΩ, which helps in reducing power loss.
The TSSOP package dimensions are 4.5 mm in length, 3.1 mm in width, and 1.025 mm in height.
The typical gate charge is 16.5 nC, making it suitable for fast switching applications.
It operates under a wide temperature range from -55°C to +150°C.
Yes, it complies with several standards including J-STD-020, MIL-STD-202, RoHS, UL 94V-0, and AEC-Q101.
This model features an isolated transistor configuration.
The maximum gate-source voltage is -8 V to +8 V.
This MOSFET has a pin count of 8.
It is suitable for automotive, industrial electronics, power management in consumer electronics, and embedded systems.
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