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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.3mm |
| Length | 3.1mm |
| Model | BSS127SSN-7 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | BSS127 |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-59 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 70mA |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 190Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 1.08nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
DiodesZetex BSS127SSN-7 is a high-quality N-Channel MOSFET transistor designed for discrete semiconductor applications requiring compact size and reliable performance. It supports a maximum continuous drain current of 70 mA and can withstand a maximum drain source voltage of 600 V, making it ideal for switching and amplification in low power electronics.
This MOSFET features an enhancement mode channel, offering precise control for switching operations. The SC-59 package with 3 pins facilitates easy surface mount integration in compact circuit designs. With a power dissipation capacity up to 1.25 W, it is suited for various electronic and industrial control applications including power management and signal processing.
The device operates reliably across a wide temperature range from -55°C to 150°C, suitable for automotive and industrial environments. Its gate characteristics include a maximum gate source voltage of ±20 V and a typical gate charge of 1.08 nC, supporting efficient switching responses. The maximum drain source resistance of 190 Ω ensures stable current management for sensitive electronic circuits.
Its compact dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height enable it to be used in space-constrained PCB layouts. Compliance with automotive standard AEC-Q101 further assures suitability for critical automotive electronic applications requiring durability and quality.
Designed with enhancement channel mode for efficient switching. Offers a maximum power dissipation of 1.25 W suitable for low power applications. Compact dimensions facilitate integration in space-limited circuits. Wide operating temperature range supports automotive and industrial uses.
Automotive standard AEC-Q101 certified for quality assurance. Surface mount package enables easy PCB assembly and reflow soldering. Low forward voltage and gate charge promote energy-efficient operation.
This N-Channel MOSFET from DiodesZetex is widely used in industrial, automotive, consumer electronics, and manufacturing applications for switching, amplification, and power regulation tasks. Browse the Electronics & Electricals > Discrete Semiconductors > MOSFET category at EnvMart for more reliable semiconductor components.
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