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DiodesZetex N-Channel MOSFET 70 mA 600 V Enhancement 3-Pin SC-59 BSS127SSN-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.3mm
Length 3.1mm
Model BSS127SSN-7
Width 1.7mm
Mount Type Surface
Series BSS127
Maximum Operating Temperature 150°C
Package Type SC-59
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 70mA
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 190Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.25W
Typical Gate Charge Qg @ Vgs 1.08nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.5V

Key Features

  • Designed with enhancement channel mode for efficient switching.
  • Offers a maximum power dissipation of 1.25 W suitable for low power applications.
  • Operates in a wide temperature range from -55°C to 150°C.
  • Features a maximum gate source voltage of ±20 V and typical gate charge of 1.08 nC.
  • Surface mount type with automotive grade AEC-Q101 standard compliance.
  • Maximum drain source resistance of 190 Ω ensuring reliable current flow control.

Product Description

DiodesZetex BSS127SSN-7 is a high-quality N-Channel MOSFET transistor designed for discrete semiconductor applications requiring compact size and reliable performance. It supports a maximum continuous drain current of 70 mA and can withstand a maximum drain source voltage of 600 V, making it ideal for switching and amplification in low power electronics.

This MOSFET features an enhancement mode channel, offering precise control for switching operations. The SC-59 package with 3 pins facilitates easy surface mount integration in compact circuit designs. With a power dissipation capacity up to 1.25 W, it is suited for various electronic and industrial control applications including power management and signal processing.

The device operates reliably across a wide temperature range from -55°C to 150°C, suitable for automotive and industrial environments. Its gate characteristics include a maximum gate source voltage of ±20 V and a typical gate charge of 1.08 nC, supporting efficient switching responses. The maximum drain source resistance of 190 Ω ensures stable current management for sensitive electronic circuits.

Its compact dimensions of 3.1 mm length, 1.7 mm width, and 1.3 mm height enable it to be used in space-constrained PCB layouts. Compliance with automotive standard AEC-Q101 further assures suitability for critical automotive electronic applications requiring durability and quality.

Designed with enhancement channel mode for efficient switching. Offers a maximum power dissipation of 1.25 W suitable for low power applications. Compact dimensions facilitate integration in space-limited circuits. Wide operating temperature range supports automotive and industrial uses.

Automotive standard AEC-Q101 certified for quality assurance. Surface mount package enables easy PCB assembly and reflow soldering. Low forward voltage and gate charge promote energy-efficient operation.

This N-Channel MOSFET from DiodesZetex is widely used in industrial, automotive, consumer electronics, and manufacturing applications for switching, amplification, and power regulation tasks. Browse the Electronics & Electricals > Discrete Semiconductors > MOSFET category at EnvMart for more reliable semiconductor components.

DiodesZetex N-Channel MOSFET 70 mA 600 V Enhancement 3-Pin SC-59 BSS127SSN-7
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Frequently Asked Questions

The maximum continuous drain current for this model is 70 mA.

It can withstand a maximum drain-source voltage of 600 V.

The maximum power dissipation capacity is 1.25 W.

This unit operates within a temperature range of -55°C to 150°C.

The typical gate charge is 1.08 nC.

It comes in an SC-59 package type, which is a surface mount design.

The maximum gate-source voltage is ±20 V.

The dimensions are 3.1 mm in length, 1.7 mm in width, and 1.3 mm in height.

It complies with the automotive standard AEC-Q101.

The maximum drain-source resistance is 190 Ω.

This model utilizes an N-channel type for its operation.

It is commonly used in industrial, automotive, consumer electronics, and manufacturing applications for switching, amplification, and power regulation tasks.

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