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Vishay SQ Rugged Type P-Channel MOSFET, 2.2 A, 20 V Enhancement Mode, 3-Pin SOT-23 SQ2301ES-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SQ2301ES-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | SQ Rugged |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 5nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device supports surface mount installation ensuring ease of PCB integration.
- Featuring a maximum drain-source resistance of 180 milliohms minimizing conduction losses.
- Designed for enhancement mode channel operation with typical gate charge of 5nC for efficient switching.
- Operates reliably from -55°C up to 175°C making it suitable for automotive applications with AEC-Q101 standard compliance.
- Maximum power dissipation is 3 watts, allowing for robust handling of power in compact designs.
- The device dimensions are length 3.04mm, width 1.4mm, height 1.02mm for space-constrained environments.
- Supports maximum gate-source voltage of -8 to +8 volts and a forward voltage of -1.2 V.
- Ideal for electronic circuits requiring efficient P-Channel MOSFET switching performance.
Product Description
Vishay SQ2301ES-T1-GE3 is a high-quality P-Channel MOSFET from the SQ Rugged series, engineered for reliable and efficient power switching applications. It supports a maximum continuous drain current of 2.2 amperes and a maximum drain-source voltage of 20 volts, making it suitable for a wide range of electronics and automotive systems.
The MOSFET is housed in a compact 3-pin SOT-23 surface-mount package, measuring 3.04mm in length, 1.4mm in width, and 1.02mm in height. Its low maximum drain-source resistance of 180 milliohms ensures minimal conduction loss, improving energy efficiency in circuits.
Designed with enhancement mode channel operation, this device has a typical gate charge of 5 nanocoulombs at Vgs, allowing for fast and efficient switching. It supports a wide operating temperature range from -55°C up to 175°C and complies with AEC-Q101 automotive standards, which assures robust performance in demanding environments.
With a maximum power dissipation of 3 watts and gate-source voltage tolerance from -8 to +8 volts, the SQ2301ES-T1-GE3 is ideal for demanding applications that require compact and reliable P-Channel MOSFET solutions.
The compact SOT-23 package supports surface mounting for easy PCB assembly. Low drain-source resistance reduces power loss and improves thermal management. Wide operating temperature range supports automotive-grade applications.
Efficient gate charge characteristics contribute to high switching speeds. Designed to meet stringent automotive reliability standards, including AEC-Q101. Robust power handling with a maximum dissipation rating of 3 watts.
Compact dimensions enable use in space-limited circuit designs.
This MOSFET is commonly used in automotive systems, industrial power management, and various electronic control circuits requiring precise and dependable P-Channel MOSFET performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.2 amperes.
It has a maximum drain-source voltage of 20 volts.
This model measures 3.04mm in length, 1.4mm in width, and 1.02mm in height.
The maximum power dissipation is rated at 3 watts.
The typical gate charge is 5 nanocoulombs at Vgs.
It supports a maximum gate-source voltage of -8 to +8 volts.
The maximum drain-source resistance is 180 milliohms.
It operates reliably from -55°C up to 175°C.
This model supports surface mount installation, facilitating easy PCB integration.
It complies with the AEC-Q101 automotive standard.
This MOSFET is commonly used in automotive systems, industrial power management, and various electronic control circuits.
The channel mode is enhancement mode, designed for efficient switching.
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