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onsemi UltraFET N-Channel MOSFET, 75 A, 100 V, Enhancement Mode, 3-Pin TO-247 HUF75652G3
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | HUF75652G3 |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | UltraFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 515W |
| Typical Gate Charge Qg @ Vgs | 393nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- The device delivers high efficiency in power conversion applications.
- It supports high energy avalanche withstand capability with very low reverse recovery diode time.
- Optimized for high-frequency operation with low RDS(on) and low gate charge.
- Designed for through-hole mounting in power circuits.
- Supports operation from -55°C to 175°C, ensuring reliability in harsh conditions.
- Typical gate charge is 393 nC at Vgs.
- Maximum rated power dissipation is 515 W.
- Forward voltage typically 1.25 V supports efficient switching.
Product Description
onsemi HUF75652G3 UltraFET N-Channel MOSFET with 75 A continuous drain current capacity and 100 V maximum drain-source voltage is engineered for efficient power conversion in industrial and electronic applications. Its enhancement mode channel design ensures reliable operation and ease of integration in various power management circuits.
The 3-pin TO-247 package allows robust through-hole mounting, enabling excellent thermal management and mechanical stability. Its high avalanche energy capability and low diode reverse recovery time make it highly efficient during switching operations.
This MOSFET operates effectively over a wide temperature range from -55°C to 175°C, ensuring durability even in harsh industrial or automotive environments. The device's low RDS(on) value of 8 mΩ and typical gate charge of 393 nC contribute to minimized conduction and switching losses.
With a maximum power dissipation of 515 W and typical forward voltage of 1.25 V, it is suitable for use in switching regulators, motor drivers, low-voltage bus switches, and high-frequency DC to DC converters. Its optimized trench gate structure supports improved switching speed and lower electromagnetic interference.
High efficiency power conversion thanks to UltraFET technology. Excellent avalanche energy handling for reliable operation. Low reverse recovery time for diode to enhance switching performance. Wide temperature range supports harsh industrial conditions.
Low RDS(on) minimizes conduction losses. Robust TO-247 package for effective heat dissipation. Typical gate charge of 393 nC for optimized switching. High power dissipation up to 515 W for demanding applications. Applications include industrial, automotive, and power management systems.
This onsemi UltraFET MOSFET is a premium choice for demanding power semiconductor applications and is widely suitable for industrial, manufacturing, and electronic equipment use. Explore more power semiconductors and discrete components in the Electronics & Electricals category at EnvMart.
Explore more products in our MOSFETs category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A.
It can handle a maximum drain-source voltage of 100 V.
The maximum drain-source resistance (RDS(on)) is 8 mΩ.
The typical gate charge at Vgs is 393 nC.
The maximum power dissipation is 515 W.
This model operates effectively from -55°C to 175°C.
It supports through-hole mounting.
The package type is TO-247.
It is suitable for applications including switching regulators, motor drivers, low-voltage bus switches, and high-frequency DC to DC converters.
The typical forward voltage is 1.25 V.
This model has a pin count of 3.
The channel type is N-channel.
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