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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 14 A 500 V Enhancement 3-Pin TO-220 STP14NK50Z

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model STP14NK50Z
Width 4.6mm
Mount Type Through Hole
Series MDmesh, SuperMESH
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 14A
Maximum Drain Source Voltage Vds 500V
Maximum Drain Source Resistance Rds 380mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 69nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.6V

Key Features

  • High-performance N-Channel MOSFET for efficient switching applications.
  • Maximum continuous drain current of 14 amperes ensures robust power handling.
  • Featuring a 500 V maximum drain-source voltage with enhancement mode channel.
  • Low maximum drain-source resistance of 380 milliohms reduces conduction losses.
  • Designed with a 3-pin TO-220 through-hole mounting package for easy PCB integration.
  • Typical gate charge of 69 nanocoulombs allows faster switching speeds.
  • Maximum power dissipation of 150 watts supports demanding applications.
  • Wide operating temperature range from -55°C to 150°C ensures reliability.

Product Description

STMicroelectronics STP14NK50Z is a high-performance MDmesh SuperMESH N-Channel MOSFET, providing reliable switching capabilities with a maximum continuous drain current of 14 amperes and a maximum drain-source voltage of 500 volts. It operates in enhancement mode and features a through-hole 3-pin TO-220 package for versatile mounting.

This device offers a low on-resistance of 380 milliohms, ensuring minimal power loss during conduction. With a typical gate charge of 69 nanocoulombs at gate-source voltage, it enables efficient high-speed switching, making it suitable for industrial power management, motor control, and power conversion circuits.

The MOSFET is rated for a maximum power dissipation of 150 watts and withstands a wide temperature range from -55°C to 150°C, ensuring robust operation under harsh environmental conditions. The gate-source voltage rating of ±30 volts prevents device damage due to voltage spikes.

Additionally, the compact physical dimensions (15.75 mm height, 10.4 mm length, 4.6 mm width) make it well-suited for space-constrained electronic assemblies. This device is designed primarily for use in industrial electronics, power supplies, automotive applications where reliable power switching is critical, and general-purpose high-current switching tasks.

High-performance N-Channel Switching Component. 14 A Maximum Continuous Drain Current. 500 V Maximum Drain-Source Voltage. Low 380 mΩ Drain-Source Resistance. 3-Pin TO-220 Through-Hole Package. Efficient Gate Charge Characteristics.

150 W Maximum Power Dissipation. Wide Operating Temperature Range (-55°C to 150°C). ±30 V Maximum Gate-Source Voltage. Compact dimensional profile for PCB integration.

STMicroelectronics offers this MDmesh SuperMESH MOSFET as a durable, efficient power transistor for use in electronic control and power conversion systems across industrial, automotive, and commercial sectors. Explore more from the MOSFET category on EnvMart for complementary semiconductor components.

STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 14 A 500 V Enhancement 3-Pin TO-220 STP14NK50Z
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Frequently Asked Questions

The maximum continuous drain current for this model is 14 amperes.

It has a maximum drain-source voltage rating of 500 volts.

The maximum drain-source resistance is 380 milliohms, which helps reduce conduction losses.

The typical gate charge is 69 nanocoulombs at gate-source voltage.

This model supports a maximum power dissipation of 150 watts.

The dimensions are 15.75 mm in height, 10.4 mm in length, and 4.6 mm in width.

It operates within a wide temperature range from -55°C to 150°C.

This device is designed with a 3-pin TO-220 through-hole mounting package.

This MOSFET is suitable for industrial power management, motor control, and power conversion circuits.

The gate-source voltage rating is ±30 volts, which helps prevent device damage from voltage spikes.

This model belongs to the MDmesh and SuperMESH series.

It operates in enhancement mode, which is typical for N-Channel MOSFETs.

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