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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 15.75mm |
| Length | 10.4mm |
| Model | STP14NK50Z |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 380mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 69nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
STMicroelectronics STP14NK50Z is a high-performance MDmesh SuperMESH N-Channel MOSFET, providing reliable switching capabilities with a maximum continuous drain current of 14 amperes and a maximum drain-source voltage of 500 volts. It operates in enhancement mode and features a through-hole 3-pin TO-220 package for versatile mounting.
This device offers a low on-resistance of 380 milliohms, ensuring minimal power loss during conduction. With a typical gate charge of 69 nanocoulombs at gate-source voltage, it enables efficient high-speed switching, making it suitable for industrial power management, motor control, and power conversion circuits.
The MOSFET is rated for a maximum power dissipation of 150 watts and withstands a wide temperature range from -55°C to 150°C, ensuring robust operation under harsh environmental conditions. The gate-source voltage rating of ±30 volts prevents device damage due to voltage spikes.
Additionally, the compact physical dimensions (15.75 mm height, 10.4 mm length, 4.6 mm width) make it well-suited for space-constrained electronic assemblies. This device is designed primarily for use in industrial electronics, power supplies, automotive applications where reliable power switching is critical, and general-purpose high-current switching tasks.
High-performance N-Channel Switching Component. 14 A Maximum Continuous Drain Current. 500 V Maximum Drain-Source Voltage. Low 380 mΩ Drain-Source Resistance. 3-Pin TO-220 Through-Hole Package. Efficient Gate Charge Characteristics.
150 W Maximum Power Dissipation. Wide Operating Temperature Range (-55°C to 150°C). ±30 V Maximum Gate-Source Voltage. Compact dimensional profile for PCB integration.
STMicroelectronics offers this MDmesh SuperMESH MOSFET as a durable, efficient power transistor for use in electronic control and power conversion systems across industrial, automotive, and commercial sectors. Explore more from the MOSFET category on EnvMart for complementary semiconductor components.
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