STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V Enhancement Mode, 3-Pin TO-220 STP14NM50N

STMicroelectronics STP14NM50N is a MDmesh™ N-Channel Enhancement Mode MOSFET designed for high-efficiency power switching applications. Rated for a maximum continuous drain current of 12 A and a drain-source voltage of 500 V, this device excels in power management and industrial electrical circuits. Packaged in a standard 3-pin TO-220 format, it provides reliable through-hole mounting suited for durable and replaceable systems.

The device boasts MDmesh technology which enhances switching performance, reduces on-resistance, and increases overall efficiency in demanding environments such as industrial automation, motor control, power supplies, and high-frequency switching applications. Its maximum power dissipation of 90 W enables it to sustain significant heat loads without degradation, ensuring long-term reliability.

Operating from a temperature range of -55°C to 150°C, the STP14NM50N MOSFET meets the stringent requirements of harsh industrial and commercial environments. Additionally, the device features a typical gate charge of 27 nC at gate-source voltage, which reduces driving losses and improves power efficiency in switching circuits.

The device’s package size (15.75 mm height, 10.4 mm length, 4.6 mm width) allows compact PCB layouts, beneficial in space-sensitive applications. The maximum gate-source voltage rating of -25 V to +25 V ensures safe operation within typical circuit voltages while protecting against voltage spikes.

Manufactured with STMicroelectronics' quality standards, this MOSFET is ideal for electronic designers requiring advanced semiconductor components for applications in power conversion, motor drives, and industrial controls.

This MOSFET features MDmesh technology for improved performance. Enhancement mode channel offers fast switching with high efficiency. Maximum power dissipation of 90 W ensures robust handling of thermal loads. Through-hole mount type enables easy PCB integration and maintenance.

Operating temperature range from -55°C to 150°C supports demanding industrial environments. Maximum drain-source resistance is 320 mΩ, minimizing power losses. Typical gate charge of 27 nC at Vgs allows low driving power consumption.

Maximum gate-source voltage ranges from -25 to +25 V, providing operational safety margin. Forward voltage of 1.6 V supports efficient conduction. Compact dimensions of 15.75 mm height, 10.4 mm length, and 4.6 mm width ensure space-saving designs.

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