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STMicroelectronics N-Channel STripFET MOSFET 24 A 60 V Enhancement Mode 3-Pin TO-252 STD16NF06LT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 2.4mm |
| Length | 6.6mm |
| Model | STD16NF06LT4 |
| Width | 6.2mm |
| Mount Type | Surface |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 24A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 85mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 7.5nC |
| Maximum Gate Source Voltage Vgs | -18, +18V |
| Forward Voltage Vf | 1.5V |
Key Features
- Enhancement mode channel type ensures efficient switching performance.
- Surface mount package with 3-pin TO-252 configuration.
- Maximum continuous drain current of 24 Amps suitable for power electronics.
- Maximum drain-source voltage rating of 60 Volts for robust operation.
- Low drain-source resistance (85 milliohms) for minimal conduction losses.
- Maximum power dissipation rated at 40 Watts.
- Operational temperature range from -55°C to 175°C for industrial applications.
- Typical gate charge of 7.5 nanocoulombs aids low gate drive requirement.
Product Description
STMicroelectronics STD16NF06LT4 model is a high-performance N-Channel STripFET MOSFET transistor designed for power management and switching applications. With a maximum continuous drain current of 24 Amperes and drain-source voltage rating of 60 Volts, it suits industrial and electronic designs requiring efficient power control.
This transistor utilizes enhancement mode channel operation and comes in a compact, surface mount TO-252 3-pin package, facilitating automated assembly and space saving on PCBs. The device is characterized by a low on-resistance of 85 milliohms which minimizes conduction losses and improves energy efficiency in circuits.
The STD16NF06LT4 supports a wide operating temperature range from -55°C to +175°C, making it applicable in demanding industrial, automotive, and consumer electronics environments. Its typical gate charge is 7.5 nC, leading to reduced gate drive losses and faster switching speeds. The forward voltage is approximately 1.5 V under conduction conditions.
Physical dimensions include a length of 6.6 mm, width of 6.2 mm, and height of 2.4 mm, optimized for compact layouts. Enhancement mode N-channel MOSFET provides robust switching capabilities. High continuous drain current supports demanding load requirements.
Low drain-source on-resistance enhances overall device efficiency. Wide operating temperature range supports diverse industry applications. Compact TO-252 package facilitates surface mounting and efficient PCB integration.
Typical gate charge value aids in low power gate drive operation. Forward voltage typical at 1.5 V ensures predictable conduction characteristics. Designed for industrial, automotive, power management, and electronic component applications.
STMicroelectronics reliability with RoHS compliance and quality manufacture standards.
This MOSFET transistor is suitable for use in power switching circuits, motor drives, power supplies, and industrial electronic control. Its compact size and high performance make it ideal for embedded system designs requiring efficient power control solutions.
Explore more STMicroelectronics discrete semiconductors and MOSFET components on EnvMart for your electronic and industrial automation needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 24 Amperes.
This MOSFET has a maximum drain-source voltage rating of 60 Volts.
The dimensions of the TO-252 package are 6.6 mm in length, 6.2 mm in width, and 2.4 mm in height.
The typical gate charge for this MOSFET is 7.5 nanocoulombs.
The operational temperature range for this model is from -55°C to 175°C.
The maximum power dissipation rating for this MOSFET is 40 Watts.
This model utilizes an enhancement mode N-channel configuration.
The maximum gate-source voltage for this MOSFET is -18V to +18V.
The drain-source on-resistance for this model is 85 milliohms.
This MOSFET is suitable for power switching circuits, motor drives, power supplies, and industrial electronic control applications.
The typical forward voltage under conduction conditions is approximately 1.5 Volts.
This model has a pin count of 3.
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