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onsemi PowerTrench N-Channel MOSFET 2.8 A 150 V Enhancement 4-Pin SOT-223 FDT86244
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.7mm |
| Length | 3.7mm |
| Model | FDT86244 |
| Width | 6.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.8A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 237mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.2W |
| Typical Gate Charge Qg @ Vgs | 4.9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 820mV |
Key Features
- Features an enhancement-type N-Channel design with low Rds(on) of 237 milliohms.
- Supports maximum power dissipation of 2.2 watts for efficient thermal handling.
- Operating temperature range from -55°C up to 150°C enables use in harsh environments.
- Surface mount device suitable for high-density electronic assemblies.
- Typical gate charge of 4.9 nC at Vgs and forward voltage of 820 mV.
- Rated for maximum gate-source voltage of ±20 V ensuring robust gate drive flexibility.
Product Description
onsemi FDT86244 is a PowerTrench N-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It features a maximum continuous drain current of 2.8 A and can withstand a drain-source voltage up to 150 V. The device employs enhancement mode technology and is packaged in a compact 4-pin SOT-223, making it ideal for surface mounting on printed circuit boards.
This MOSFET is optimized for low on-resistance (237 milliohms) which helps minimize conduction losses, allowing improved efficiency in power management applications. It supports a maximum power dissipation of 2.2 watts and operates reliably over a wide temperature range from -55°C to 150°C, suitable for demanding industrial and automotive environments.
The device’s typical gate charge of 4.9 nanocoulombs and forward voltage of 820 millivolts provide predictable switching characteristics. The maximum gate-source voltage rating of plus or minus 20 volts offers robust control and protection margins for gate drive circuitry.
With precise dimensions of 6.7 mm width, 3.7 mm length, and 1.7 mm height, the FDT86244 fits well in compact designs requiring efficient power management. Its surface-mount design enables easy integration in automated assembly lines and high-density electronic boards.
Enhancement mode N-Channel MOSFET suitable for switching applications. Low on-resistance and low gate charge for efficient operation. Wide temperature range and robust voltage ratings ensure durability. Compact SOT-223 package supports surface mount technology.
Ideal for industrial, automotive, and consumer electronics power circuits. PowerTrench technology ensures reliability and thermal efficiency.
Explore the Electronics & Electricals category on EnvMart for onsemi MOSFETs and related power semiconductors optimized for a variety of industrial and commercial electronics applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.8 A.
It can withstand a maximum drain-source voltage of 150 V.
The on-resistance (Rds(on)) is 237 milliohms, which helps minimize conduction losses.
This model operates reliably over a temperature range from -55°C to 150°C.
The typical gate charge is 4.9 nanocoulombs at Vgs.
The forward voltage is rated at 820 millivolts.
It is packaged in a compact 4-pin SOT-223 format, suitable for surface mounting.
The dimensions are 6.7 mm in width, 3.7 mm in length, and 1.7 mm in height.
The maximum power dissipation is 2.2 watts.
The maximum gate-source voltage is rated at ±20 V.
It features an enhancement-type N-Channel design.
This model is suitable for industrial, automotive, and consumer electronics power circuits.
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