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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5mm |
| Model | ZXMHC3F381N8TC |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 4.98A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.35W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.82V |
| Transistor Configuration | Full Bridge |
DiodesZetex ZXMHC3F381N8TC is a Full Bridge Power MOSFET device featuring 4 Type P and Type N channels. Designed for high efficiency switching, this enhancement mode MOSFET supports a maximum continuous drain current of 4.98 amperes and a maximum drain-source voltage of 30 volts. It is packaged in an SOIC 8-pin surface mount package.
This MOSFET is suitable for a wide range of industrial and electronic applications including power management circuits, motor drivers, and switching regulators. The low drain-source resistance of 80 milliohms improves conduction efficiency and reduces power loss. The typical gate charge of 9 nanocoulombs ensures rapid switching response, ideal for high-frequency operations.
The device operates reliably over a broad temperature range from -55°C up to +150°C, making it appropriate for harsh environmental conditions in industrial, automotive, and commercial electronics systems. Its power dissipation rating of 1.35 watts supports thermal stability within standard operating parameters.
Key technical features include a forward voltage of 0.82 volts and a gated voltage window of -20 to +20 volts, enabling robust circuit design flexibility. The 8-pin SOIC footprint facilitates compact, surface-mounted PCB layouts, simplifying integration into modern electronic assemblies.
Full bridge transistor configuration suitable for power applications. Enhancement mode channel design for efficient switching. Maximum continuous drain current of 4.98 amperes for reliable performance. Maximum drain-source voltage rated at 30 volts to handle moderate power levels.
Low drain-source resistance of 80 milliohms reducing conduction losses. Typical gate charge of 9 nanocoulombs enabling fast switching. Wide operating temperature range from -55°C to +150°C for durability. Surface mountable SOIC package with 8 pins allows compact PCB design.
Rated maximum power dissipation of 1.35 watts for thermal management. Forward voltage of 0.82 volts ensuring low voltage drop in applications.
Ideal for industrial, automotive, manufacturing, and power electronics sectors requiring reliable and efficient MOSFET components. Choose this DiodesZetex MOSFET for applications demanding high performance and durability.
Explore more high-quality MOSFETs and semiconductor devices on EnvMart for your electronic component needs.
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