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DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET 4.98A 30V Enhancement SOIC 8-Pin ZXMHC3F381N8TC

Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.5mm
Length 5mm
Model ZXMHC3F381N8TC
Width 4mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, J-STD-020
Pin Count 8
Number of Elements per Chip 4
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 4.98A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 80mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.35W
Typical Gate Charge Qg @ Vgs 9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.82V
Transistor Configuration Full Bridge

Key Features

  • Full bridge transistor configuration suitable for power applications.
  • Enhancement mode channel design for efficient switching.
  • Maximum continuous drain current of 4.98 amperes for reliable performance.
  • Maximum drain-source voltage rated at 30 volts to handle moderate power levels.
  • Low drain-source resistance of 80 milliohms reducing conduction losses.
  • Typical gate charge of 9 nanocoulombs enabling fast switching.
  • Wide operating temperature range from -55°C to +150°C for durability.
  • Surface mountable SOIC package with 8 pins allows compact PCB design.

Product Description

DiodesZetex ZXMHC3F381N8TC is a Full Bridge Power MOSFET device featuring 4 Type P and Type N channels. Designed for high efficiency switching, this enhancement mode MOSFET supports a maximum continuous drain current of 4.98 amperes and a maximum drain-source voltage of 30 volts. It is packaged in an SOIC 8-pin surface mount package.

This MOSFET is suitable for a wide range of industrial and electronic applications including power management circuits, motor drivers, and switching regulators. The low drain-source resistance of 80 milliohms improves conduction efficiency and reduces power loss. The typical gate charge of 9 nanocoulombs ensures rapid switching response, ideal for high-frequency operations.

The device operates reliably over a broad temperature range from -55°C up to +150°C, making it appropriate for harsh environmental conditions in industrial, automotive, and commercial electronics systems. Its power dissipation rating of 1.35 watts supports thermal stability within standard operating parameters.

Key technical features include a forward voltage of 0.82 volts and a gated voltage window of -20 to +20 volts, enabling robust circuit design flexibility. The 8-pin SOIC footprint facilitates compact, surface-mounted PCB layouts, simplifying integration into modern electronic assemblies.

Full bridge transistor configuration suitable for power applications. Enhancement mode channel design for efficient switching. Maximum continuous drain current of 4.98 amperes for reliable performance. Maximum drain-source voltage rated at 30 volts to handle moderate power levels.

Low drain-source resistance of 80 milliohms reducing conduction losses. Typical gate charge of 9 nanocoulombs enabling fast switching. Wide operating temperature range from -55°C to +150°C for durability. Surface mountable SOIC package with 8 pins allows compact PCB design.

Rated maximum power dissipation of 1.35 watts for thermal management. Forward voltage of 0.82 volts ensuring low voltage drop in applications.

Ideal for industrial, automotive, manufacturing, and power electronics sectors requiring reliable and efficient MOSFET components. Choose this DiodesZetex MOSFET for applications demanding high performance and durability.

Explore more high-quality MOSFETs and semiconductor devices on EnvMart for your electronic component needs.

DiodesZetex Full Bridge 4 Type P, Type N-Channel Power MOSFET 4.98A 30V Enhancement SOIC 8-Pin ZXMHC3F381N8TC
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Frequently Asked Questions

The maximum continuous drain current for this model is 4.98 amperes.

It has a maximum drain-source voltage rating of 30 volts.

The typical gate charge is 9 nanocoulombs, enabling fast switching capabilities.

The low drain-source resistance is rated at 80 milliohms, which helps reduce conduction losses.

This MOSFET operates over a wide temperature range from -55°C to +150°C.

It is packaged in an 8-pin SOIC surface mount package, suitable for compact PCB design.

This model features both Type P and Type N channels in its configuration.

The maximum power dissipation rating is 1.35 watts, supporting thermal stability.

The forward voltage is rated at 0.82 volts, ensuring low voltage drop in applications.

It meets several standards including RoHS, UL 94V-0, AEC-Q101, MIL-STD-202, and J-STD-020.

This device features a full bridge transistor configuration suitable for power applications.

The dimensions are 1.5 mm in height, 5 mm in length, and 4 mm in width.

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