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DiodesZetex Full Bridge 4 Type N, Type P-Channel Power MOSFET 1.8A 60V Enhancement 8-Pin SOIC ZXMHC6A07N8TC
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 5mm |
| Model | ZXMHC6A07N8TC |
| Width | 4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | UL 94V-0, AEC-Q101, J-STD-020, RoHS, MIL-STD-202 |
| Pin Count | 8 |
| Number of Elements per Chip | 4 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 1.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.36W |
| Typical Gate Charge Qg @ Vgs | 3.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
| Transistor Configuration | Full Bridge |
Key Features
- Full bridge configuration with 4 elements per chip for versatile switching applications.
- 8-pin SOIC surface mount package suitable for compact PCB designs.
- Continuous drain current rating of 1.8 amperes ensures reliable power handling.
- Maximum drain-source voltage of 60 volts for robust operation.
- Low maximum drain-source resistance of 350 milliohms reduces conduction losses.
- Maximum power dissipation of 1.36 watts supports medium power electronic circuits.
- Wide operating temperature range from -55°C to +150°C for harsh environments.
- Typical gate charge of 3.2 nanocoulombs for fast switching capability.
Product Description
The DiodesZetex ZXMHC6A07N8TC is a highly efficient full bridge power MOSFET assembly combining both Type N and Type P-channel enhancement mode transistors. Designed for surface mount applications, it features an 8-pin SOIC package that supports compact PCB layouts and effective thermal management.
It delivers a maximum continuous drain current of 1.8 A and can withstand up to 60 V maximum drain-source voltage, ensuring capability for various power switching applications. The device dissipates up to 1.36 W power, suitable for medium power electronic circuits.
The MOSFET operates over a wide temperature range from -55°C to +150°C, making it ideal for industrial, automotive, and commercial electronics exposed to harsh environments. With a low maximum drain-source resistance of 350 mΩ, it offers efficient conduction and reduced losses.
Key electrical features include a typical gate charge of 3.2 nC at the specified gate-source voltage and a forward voltage drop of 0.8 V, enabling fast and efficient switching performance with minimal energy dissipation.
This component meets critical quality and environmental standards including UL 94V-0 flammability, automotive-grade AEC-Q101, J-STD-020, RoHS compliance, and MIL-STD-202 test methods. Its compact 5 mm by 4 mm footprint and 1.5 mm height optimize board space utilization.
This full bridge power MOSFET is ideal for applications in industrial control systems, automotive electronics, and power management circuits. Designed for seamless integration into high-efficiency power switching and driver circuits on printed circuit boards.
The product's robustness enables operation even in demanding thermal and electrical environments.
Country of origin is China. This DiodesZetex MOSFET supports reliable and efficient power electronic design and is available for ordering on EnvMart under the Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.8 amperes.
It can withstand a maximum drain-source voltage of 60 volts.
The typical gate charge is 3.2 nanocoulombs.
This model has dimensions of 5 mm in length, 4 mm in width, and a height of 1.5 mm.
The maximum power dissipation supported by this MOSFET is 1.36 watts.
It operates over a wide temperature range from -55°C to +150°C.
It comes in an 8-pin SOIC surface mount package.
This model complies with UL 94V-0, AEC-Q101, J-STD-020, RoHS, and MIL-STD-202 standards.
The maximum drain-source resistance is 350 milliohms.
The transistor configuration is a full bridge with 4 elements per chip.
It features both Type N and Type P-channel configurations.
This MOSFET is suitable for applications in industrial control systems, automotive electronics, and power management circuits.
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