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DiodesZetex N-Channel MOSFET 170 mA 100 V Enhancement 3-Pin SOT-23 BSS123-7-F

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DiodesZetex N-Channel MOSFET 170 mA 100 V Enhancement 3-Pin SOT-23 BSS123-7-F

Name: DiodesZetex N-Channel MOSFET 170 mA 100 V Enhancement 3-Pin SOT-23 BSS123-7-F
Brand: DiodesZetex
SKU: 223719
Price: 0.05 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	BSS123-7-F
Width	1.4mm
Mount Type	Surface
Series	BSS123
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q104, AEC-Q100, AEC-Q101, AEC-Q200
Channel Type	N
Maximum Continuous Drain Current Id	170mA
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V

Key Features

This enhancement-type MOSFET features a low maximum drain-source resistance of 10 ohms providing efficient switching.
The device supports a gate-source voltage range from -20 V to +20 V allowing flexible control.
Designed with surface mount technology ensuring ease of assembly in modern electronics.
Maximum power dissipation is rated at 300 mW, suitable for low power applications.
Operating temperature range spans from -55°C to 150°C for reliable performance in harsh environments.
Compact dimensions measure 3 mm length, 1.4 mm width, and 1.1 mm height for space-constrained designs.
The MOSFET complies with automotive standards AEC-Q104, AEC-Q100, AEC-Q101, and AEC-Q200 ensuring quality and reliability.
Forward voltage of 1.3 V supports efficient conduction characteristics.

Product Description

DiodesZetex BSS123-7-F is a high-reliability N-Channel enhancement mode MOSFET designed for low power electronic applications. It supports a maximum continuous drain current of 170 mA and a maximum drain-source voltage of 100 V, making it suitable for various switching and amplification tasks in both industrial and automotive electronics.

This device is housed in a small 3-pin SOT-23 package with compact dimensions (3 mm length, 1.4 mm width, 1.1 mm height) optimized for surface mount assembly. Its low maximum drain-source resistance of 10 ohms ensures efficient operation, while the device's gate-source voltage rating of -20 V to +20 V offers wide control flexibility. The maximum power dissipation rating of 300 mW and operating temperature range from -55°C to 150°C make it reliable under diverse environmental conditions.

Compliance with automotive standards AEC-Q104, AEC-Q100, AEC-Q101, and AEC-Q200 ensures suitability for rigorous automotive and industrial applications. The typical forward voltage of 1.3 V supports optimized conduction. With its compact form factor, this MOSFET is ideal for densely packed circuit boards requiring efficient power control components.

This MOSFET is widely used in power management, switching, and signal amplification applications. Designed for surface mount technology, it enables automated PCB assembly processes. Capable of reliable operation in automotive-grade and harsh industrial environments.

Compact SOT-23 package features minimal footprint and thermal efficiency. Offers robust electrical characteristics including 170 mA continuous current and 100 V voltage rating. Supports versatile gate voltages from -20 to +20 V for customized circuit design.

Meets stringent automotive industry standards for quality and performance.

This product is listed in the MOSFET category at EnvMart and is suitable for electronics designers and engineers seeking reliable discrete semiconductor transistors for low power switching and amplification tasks.