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DiodesZetex N-Channel Enhancement MOSFET, 200 mA, 50 V, 3-Pin SOT-23 Package BSS138-7-F

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DiodesZetex N-Channel Enhancement MOSFET, 200 mA, 50 V, 3-Pin SOT-23 Package BSS138-7-F

Name: DiodesZetex N-Channel Enhancement MOSFET, 200 mA, 50 V, 3-Pin SOT-23 Package BSS138-7-F
Brand: DiodesZetex
SKU: 223718
Price: 0.05 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	BSS138-7-F
Width	1.4mm
Mount Type	Surface
Series	BSS138
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q100, AEC-Q200, AEC-Q104, AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	3.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	600mV

Key Features

Supports a maximum drain current of 200 mA for low power switching.
Maximum drain-source voltage rating of 50 V ensures robust performance.
Package type is compact and surface mount compatible SOT-23.
Features an enhancement mode channel for controlled conductivity.
Maximum power dissipation rated at 300 mW for thermal reliability.
Operating temperature range from -55°C to 150°C for varied environments.
Low forward voltage of 600 mV for efficient operation.
Automotive standards compliant with AEC-Q100 and related certifications.

Product Description

DiodesZetex BSS138-7-F is an N-Channel enhancement mode MOSFET designed for low power switching in electronic circuits. It supports a maximum continuous drain current of 200 mA and can handle drain-source voltages up to 50 V, making it ideal for compact semiconductor applications requiring precise switching capabilities.

This transistor is packaged in a 3-pin SOT-23 surface-mount form factor, which facilitates automated assembly and space-saving PCB layouts. The enhancement channel mode ensures effective conductivity control, suitable for various industrial and automotive control applications.

Key electrical parameters include a maximum power dissipation of 300 mW and a forward voltage drop of 600 mV, contributing to its efficient operational profile. The device operates reliably across a wide temperature range from -55°C to 150°C, supporting use in demanding environments and automotive-grade systems compliant with AEC-Q100 and related standards.

Its dimensions are 3 mm in length, 1.4 mm in width, and 1.1 mm in height, maintaining compactness without compromising performance. Manufactured in China, the BSS138-7-F MOSFET brings a balance of quality and cost-effectiveness for electronics manufacturing.

Supports low power switching up to 200 mA continuous drain current. Maximum drain-source voltage of 50 V ensures reliability. SOT-23 surface mount package for compact PCB layout. Enhancement channel mode controls conduction effectively.

Power dissipation up to 300 mW supports thermal management. Wide operating temperature range guarantees versatility. Low forward voltage of 600 mV minimizes power loss. Automotive standard compliant for quality assurance.

Compact dimensions fit modern electronics designs. Manufactured in China under stringent quality processes.

This MOSFET finds applications in industrial electronic devices, automotive electronics, consumer appliances, communication equipment, and manufacturing automation systems. Its small form factor and robust electrical characteristics make it suitable for enhancing switching efficiency in low voltage DC circuits.

Explore a wide selection of MOSFETs and other semiconductor components in the Electronics category at EnvMart for professional-grade industrial applications.