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Infineon Type P-Channel IGBT 150A 1200V 3-Pin TO-247 Through Hole IKQ75N120CT2XKSA1

Category IGBT Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model IKQ75N120CT2XKSA1
Mount Type Through Hole
Series TrenchStop
Energy Rating 10.8mJ
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -40°C
Pin Count 3
Maximum Continuous Collector Current Ic 150A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
Channel Type Type P
Maximum Power Dissipation Pd 938W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Maximum continuous collector current of 150 amperes for reliable switching performance.
  • High maximum collector-emitter voltage rating of 1200 volts for robust power handling.
  • Compact TO-247 package design with through-hole mounting suitable for efficient heat dissipation.
  • TrenchStop series device with low saturation voltage and high switching speed up to 20 kHz.
  • Wide operating temperature range from -40°C to 175°C for versatile industrial applications.
  • Maximum power dissipation rated at 938 watts to support demanding power loads.
  • Extended electrical and thermal reliability with improved thermal resistance characteristics.
  • Maximum gate-emitter voltage of 20 volts ensuring gate control safety margins.

Product Description

Infineon IKQ75N120CT2XKSA1 is a Type P-Channel Insulated Gate Bipolar Transistor (IGBT) engineered to handle high power requirements with a continuous collector current capability of 150 amperes and a maximum collector-emitter voltage of 1200 volts. Packaged in a robust 3-Pin TO-247 through-hole format, this device is part of the TrenchStop series, which ensures low conduction losses and enhanced switching speed up to 20 kHz.

The TO-247PLUS packaging technology provides improved thermal behavior with approximately 15% better heat dissipation compared to standard TO-247 packages. Its design includes an absence of screw holes allowing for higher current capacity and extended collector-emitter pin creepage of 4.25 mm, increasing system safety and power density.

With a maximum power dissipation rating of 938 watts and an operating temperature range spanning from -40°C to 175°C, this IGBT is suitable for a wide range of industrial, commercial, and power electronics applications. Its maximum gate-emitter voltage rating of 20 volts ensures robust gate control, while the device’s energy rating of 10.8 mJ offers protection against switching transients.

Ideal for use in power inverters, motor drives, and power supply circuits, this Infineon IGBT supports high efficiency and reliability requirements. The device does not have specific automotive standards but meets general semiconductor quality expectations.

High continuous collector current of 150A supports heavy load applications. Robust 1200V collector-emitter voltage rating for demanding power environments. TO-247 through-hole package offers enhanced thermal conduction. TrenchStop series design provides low saturation voltage and fast switching.

Wide temperature tolerance enables use in harsh industrial conditions. Energy rating of 10.8mJ safeguards against surge currents. Improved thermal performance with TO-247PLUS packaging technology. Maximum gate-emitter voltage of 20V ensures safe gating operations.

Designed for power electronic applications requiring durability and efficiency. Explore EnvMart’s comprehensive range of semiconductors and power discrete components for industrial and electronic design needs.

Infineon Type P-Channel IGBT 150A 1200V 3-Pin TO-247 Through Hole IKQ75N120CT2XKSA1
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