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ROHM N-Channel IGBT 80 A 650 V 3-Pin TO-247N Through Hole RGW80TS65DHRC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Model | RGW80TS65DHRC11 |
| Mount Type | Through Hole |
| Package Type | TO-247N |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 650V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 214W |
| Maximum Gate Emitter Voltage VGEO | ±30 V |
Key Features
- This IGBT supports a maximum continuous collector current of 80 A.
- Operates at a maximum collector emitter voltage of 650 V for robust performance.
- Designed with a maximum power dissipation capacity of 214 W to handle demanding applications.
- Features through-hole mounting in a TO-247N package for easy installation.
- Includes a maximum gate emitter voltage tolerance of ±30 V for operational flexibility.
- Utilizes a 3-pin design optimized for circuit integration and heat dissipation.
- Provides low collector emitter saturation voltage and low switching loss for efficient operation.
- Lead plating is Pb-free and compliant with RoHS standards for environmental safety.
Product Description
ROHM RGW80TS65DHRC11 N-Channel IGBT is an advanced discrete semiconductor designed for industrial, automotive, and power electronics applications requiring efficient power switching and durable voltage and current handling capabilities.
This IGBT features a maximum continuous collector current of 80 A and a maximum collector emitter voltage of 650 V, supporting high power operations. Its power dissipation rating of 214 W allows it to withstand demanding thermal conditions while maintaining reliability.
Equipped with a 3-pin TO-247N through-hole package, it facilitates easy mounting and excellent heat dissipation, ideal for use in DC-DC converters, inverter circuits, and power factor correction (PFC) systems. The device incorporates a maximum gate emitter voltage of ±30 V, enhancing control flexibility and safeguarding circuit components.
ROHM's RGW series IGBTs are AEC-Q101 qualified, making them suitable for automotive and industrial environments that require high safety and endurance standards. The device benefits from low collector emitter saturation voltage and switching losses that help improve overall system efficiency.
Additionally, the IGBT is Pb-free and RoHS compliant, aligning with global environmental regulations. It supports applications in power converters, on-board and off-board computers, and industrial inverters, contributing to energy efficiency and robust power management.
This IGBT supports a maximum continuous collector current of 80 A. Operates at a maximum collector emitter voltage of 650 V for robust performance. Designed with a maximum power dissipation capacity of 214 W to handle demanding applications.
Features through-hole mounting in a TO-247N package for easy installation. Includes a maximum gate emitter voltage tolerance of ±30 V for operational flexibility. Utilizes a 3-pin design optimized for circuit integration and heat dissipation.
Provides low collector emitter saturation voltage and low switching loss for efficient operation. Lead plating is Pb-free and compliant with RoHS standards for environmental safety. It is AEC-Q101 qualified meeting stringent automotive reliability standards.
Explore the full range of industrial semiconductors and components at EnvMart for reliable and high-performance electronics solutions.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 80 A.
This model operates at a maximum collector emitter voltage of 650 V.
It is designed with a maximum power dissipation capacity of 214 W.
This IGBT features through-hole mounting in a TO-247N package.
The maximum gate emitter voltage tolerance is ±30 V.
This model utilizes a 3-pin design optimized for circuit integration and heat dissipation.
It supports applications in power converters, inverter circuits, and power factor correction (PFC) systems.
The lead plating is Pb-free and compliant with RoHS standards for environmental safety.
Yes, it is AEC-Q101 qualified, making it suitable for automotive and industrial environments.
This IGBT is an N-channel type.
The country of origin for this IGBT is India.
It provides low collector emitter saturation voltage and low switching losses for efficient operation.
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