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Vishay P-Channel MOSFET 30 V, 8.1 A, 2.5 W Power Dissipation, SOIC 8-Pin Surface Mount SI4435DDY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4435DDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4435DDY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.1A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type P channel with enhancement mode operation for efficient switching.
- Maximum continuous drain current of 8.1 A ensures powerful handling.
- 30 V maximum drain-source voltage suitable for low-voltage applications.
- Low drain-source resistance of 24 mΩ reduces power losses.
- Maximum power dissipation of 2.5 W in a compact SOIC surface mount package.
- Wide operating temperature range from -55°C to 150°C supports harsh environments.
- Typical gate charge of 32 nC at Vgs improves switching speed.
- Rated gate-source voltage of -20 V to +20 V for robust gate tolerance.
Product Description
Vishay SI4435DDY-T1-GE3 is a P-Channel Enhancement Mode MOSFET designed for efficient switching and power management in electronic circuits. It supports a maximum continuous drain current of 8.1 A and a maximum drain-source voltage of 30 V. The device is supplied in an industry-standard 8-pin SOIC surface mount package, making it suitable for compact PCB layouts in industrial and consumer electronics.
The MOSFET features a low on-resistance of 24 milliohms to enhance efficiency and reduce heat dissipation. With a maximum power dissipation rating of 2.5 W, it can maintain reliable operation under typical workload conditions. Its wide temperature operating range from -55°C to 150°C ensures stable performance in demanding environments, including industrial manufacturing and automotive electronic systems.
This device includes a typical gate charge of 32 nC at gate-source voltage which supports rapid switching speeds essential for PWM and digital signal controls. The maximum gate-source voltage rating ranges from -20 V to +20 V, offering flexibility in drive voltages without risking damage to the gate oxide.
The compact SOIC package measuring 5 mm in length, 4 mm in width, and 1.5 mm in height allows seamless integration into modern electronics. While it does not carry automotive standard approvals, it is suitable for a wide range of general semiconductor applications such as power management, DC/DC converters, and load switching in industrial, laboratory, and consumer electronic devices.
Type P channel semiconductor device optimized for power switching. 8.1 Amp maximum continuous drain current for moderate power loads. 30 Volt drain-source voltage rating ideal for low voltage applications. SOIC 8-pin surface mount package for compact PCB designs.
Maximum power dissipation of 2.5 Watts supports moderate thermal loads. Wide temperature range from -55°C to 150°C for industrial reliability. Typical gate charge of 32 nC enabling efficient switching performance. Gate-source voltage tolerance of -20 to +20 Volts for flexible drive voltages.
Low 24 milliohms drain-source resistance reduces conduction losses. Explore the full range of Vishay MOSFETs and discrete semiconductors on EnvMart to find the optimal component for your power management and switching designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 8.1 A, allowing it to handle moderate power loads efficiently.
This MOSFET has a maximum drain-source voltage rating of 30 V, making it suitable for low-voltage applications.
It supports a maximum power dissipation of 2.5 W, which is adequate for moderate thermal loads during operation.
The device features a low drain-source resistance of 24 mΩ, which helps to reduce power losses during operation.
The typical gate charge for this model at gate-source voltage is 32 nC, which enhances its switching speed.
It operates within a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.
This model is supplied in an 8-pin SOIC surface mount package, which is ideal for compact PCB designs.
The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate-source voltage rating is -20 V to +20 V, providing flexibility in drive voltages.
This unit features a P-channel type with enhancement mode operation, optimized for power switching applications.
It is suitable for a variety of applications including power management, DC/DC converters, and load switching in industrial and consumer electronics.
The forward voltage of this model is -1.2 V, which is relevant for its operation in certain circuit configurations.
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