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DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W 3-Pin E-Line Through Hole ZTX605

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DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W 3-Pin E-Line Through Hole ZTX605

Name: DiodesZetex Darlington Transistor NPN 1 A 120 V 1 W 3-Pin E-Line Through Hole ZTX605
Brand: DiodesZetex
SKU: 178541
Price: 0.89 USD
Availability: InStock

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Category Darlington Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	4.01mm
Length	4.77mm
Model	ZTX605
Mount Type	Through Hole
Series	ZTX605
Maximum Operating Temperature	200°C
Package Type	E-Line
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Continuous Collector Current Ic	1A
Maximum Collector Emitter Voltage Vceo	120V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	500
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	10V
Maximum Collector Base Voltage VCBO	140V
Maximum Collector Cut-off Current	0.00001mA
Maximum Power Dissipation Pd	1W
NXP BC879 NPN Darlington Transistor, 1 A 80 V HFE	1000, 3-Pin SPTBrand: NXP
DiodesZetex ZTX605 1 Darlington Transistor NPN, 1 A 120 V HFE	500, 3-Pin E-Line

Key Features

This transistor has a minimum DC current gain (hFE) of 500.
It features a 3-pin through-hole mount configuration suitable for various electronic applications.
The maximum emitter-base voltage rating is 10 V, and maximum collector-base voltage is 140 V.
Operating temperature ranges from -55°C up to 200°C support high reliability.
The compact dimensions are length 4.77 mm and height 4.01 mm for efficient PCB integration.
NPN transistor polarity and single element per chip construction ensure standard performance.
Maximum collector cut-off current is extremely low at 0.00001 mA reducing leakage losses.

Product Description

The DiodesZetex ZTX605 Darlington Transistor NPN is engineered for reliable amplification and switching in industrial and electronics applications. It supports a maximum continuous collector current of 1 A and a collector-emitter voltage up to 120 V, making it suitable for medium power circuits.

Designed in a through-hole 3-pin E-Line package with compact physical dimensions (4.77 mm length and 4.01 mm height), it fits well on printed circuit boards requiring space efficiency. The transistor features high current gain (hFE) of 500, which enables efficient amplification for signal processing.

Operational stability is ensured across a broad temperature range from -55°C to 200°C. The device is rated for maximum emitter-base voltage of 10 V and collector-base voltage of 140 V, allowing tolerance to high voltage transients. The maximum power dissipation is 1 W, with very low leakage current ensuring minimal power loss during standby.

This NPN Darlington transistor is ideal for use in electronic controls, power switching, and amplification in industrial, laboratory, and consumer electronic systems. This transistor has a minimum DC current gain (hFE) of 500.

It features a 3-pin through-hole mount configuration suitable for various electronic applications. The maximum emitter-base voltage rating is 10 V, and maximum collector-base voltage is 140 V. Operating temperature ranges from -55°C up to 200°C support high reliability.

The compact dimensions are length 4.77 mm and height 4.01 mm for efficient PCB integration. NPN transistor polarity and single element per chip construction ensure standard performance. Maximum collector cut-off current is extremely low at 0.00001 mA reducing leakage losses.

This product is part of the ZTX605 series by DiodesZetex and is commonly used in electronics assembly, industrial automation, and control circuits. The through-hole mounting technique simplifies installation in prototype and production environments.

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