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Vishay P-Channel MOSFET 4 A 100 V Enhancement 3-Pin TO-220 IRF9510PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF9510PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 43W |
| Typical Gate Charge Qg @ Vgs | 8.7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5.5V |
| P-Channel MOSFET Transistor, 4 A, 100 V, 3-Pin TO-220AB Vishay IRF9510Brand | Vishay |
Key Features
- Maximum continuous drain current of 4 A ensures reliable high-current operation.
- Drain-source voltage rating up to 100 V suitable for various power applications.
- TO-220 package type facilitates efficient heat dissipation and ease of mounting.
- Enhancement mode channel operation provides fast switching and rugged design.
- Maximum power dissipation of 43 W supports robust performance in industrial environments.
- Wide operating temperature range from -55°C to 175°C for demanding conditions.
- Maximum gate-source voltage ±20 V enhances device protection and stability.
- Low maximum drain-source resistance of 1.2 Ω optimizes conduction efficiency.
Product Description
Vishay IRF9510PBF is a high-performance P-Channel MOSFET designed for power electronics applications. It features a maximum continuous drain current of 4 A and a drain-source voltage rating of 100 V, packaged in a widely used 3-pin TO-220 case. The enhancement mode operation enables fast switching speeds and reliable performance in power management circuits.
This MOSFET exhibits a low on-resistance of 1.2 Ω, which reduces conduction losses and improves efficiency. It can dissipate up to 43 W of power, making it suitable for industrial and commercial devices requiring robust power handling.
Operating over a wide temperature range from -55°C to 175°C, this device is ideal for harsh environments including industrial automation, power supply regulation, and load switching. The maximum gate-source voltage of ±20 V protects the gate while enabling stable control of the device.
The TO-220 package simplifies mounting via through-hole and provides effective thermal management. Typical applications include DC-DC converters, motor control, battery protection, and switching power supplies.
Maximum continuous drain current of 4 A ensures reliable high-current operation. Drain-source voltage rating up to 100 V suitable for various power applications. TO-220 package type facilitates efficient heat dissipation and ease of mounting.
Enhancement mode channel operation provides fast switching and rugged design. Maximum power dissipation of 43 W supports robust performance in industrial environments. Wide operating temperature range from -55°C to 175°C for demanding conditions.
Maximum gate-source voltage ±20 V enhances device protection and stability. Low maximum drain-source resistance of 1.2 Ω optimizes conduction efficiency. Typical gate charge of 8.7 nC allows for efficient gate drive control.
Compact dimensions: length 10.41 mm, width 4.7 mm, height 9.01 mm.
Vishay products are commonly used in industrial automation, power management, and consumer electronics manufacturing. EnvMart offers this MOSFET as part of its comprehensive electronics components catalog suitable for engineering and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 4 A, ensuring reliable high-current operation.
The drain-source voltage rating for this model is up to 100 V, making it suitable for various power applications.
This MOSFET is packaged in a 3-pin TO-220 case, which facilitates efficient heat dissipation and ease of mounting.
The maximum power dissipation of this MOSFET is 43 W, supporting robust performance in industrial environments.
This model operates over a wide temperature range from -55°C to 175°C, suitable for demanding conditions.
The maximum gate-source voltage for the IRF9510PBF is ±20 V, enhancing device protection and stability.
The maximum drain-source resistance is 1.2 Ω, which optimizes conduction efficiency.
The dimensions of this MOSFET are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
This model features an enhancement mode P-channel design, enabling fast switching speeds and rugged performance.
Typical applications for this MOSFET include DC-DC converters, motor control, battery protection, and switching power supplies.
The typical gate charge for this MOSFET is 8.7 nC, allowing for efficient gate drive control.
The IRF9510PBF is designed for through-hole mounting, which simplifies installation and enhances thermal management.
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