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Vishay P-Channel MOSFET 4 A 20 V Enhancement Mode 6-Pin SC-70 SI1441EDH-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 2.2mm |
| Model | SI1441EDH-T1-GE3 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | Si1441EDH |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.8W |
| Typical Gate Charge Qg @ Vgs | 22nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | -1.2V |
Key Features
- Type P channel enhances switching performance.
- Maximum continuous drain current of 4 amperes for reliable operation.
- Maximum drain-source voltage rated at 20 volts.
- Low drain-source resistance of 100 milliohms reduces conduction losses.
- Enhancement mode channel for controlled conduction.
- Maximum power dissipation up to 2.8 watts ensures thermal reliability.
- Wide operating temperature range from -55°C to +150°C.
- Typical gate charge of 22 nanocoulombs at gate-source voltage.
Product Description
Vishay SI1441EDH-T1-GE3 is a P-Channel MOSFET designed for power switching applications offering a maximum continuous drain current of 4 amperes and a drain-source voltage rating of 20 volts. The device is housed in a compact 6-pin SC-70 surface mount package with dimensions measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
This enhancement mode MOSFET features a low maximum drain-source resistance of 100 milliohms, which contributes to improved efficiency by minimizing conduction losses. It supports a maximum power dissipation of 2.8 watts and can reliably operate across a broad temperature range from -55°C to +150°C, making it suitable for demanding industrial, electronic, and automotive environments.
The transistor exhibits a typical gate charge of 22 nanocoulombs at the specified gate-source voltage range of -10 to +10 volts, optimizing switching performance for efficient power management. Its forward voltage of -1.2 volts is aligned with the requirements of power converter circuitry and load drivers.
This MOSFET is ideal for usage in power management circuits, load switching, and signal amplification in industrial and commercial electronics. Its surface mount footprint enables seamless integration in high-density printed circuit boards.
Type P channel enhances switching performance. Maximum continuous drain current of 4 amperes for reliable operation. Maximum drain-source voltage rated at 20 volts. Low drain-source resistance of 100 milliohms reduces conduction losses.
Enhancement mode channel for controlled conduction. Maximum power dissipation up to 2.8 watts ensures thermal reliability. Wide operating temperature range from -55°C to +150°C. Compact package dimensions: 2.2 mm length, 1.35 mm width, and 1 mm height.
Typical gate charge of 22 nanocoulombs at gate-source voltage. Maximum gate-source voltage ranges from -10 to +10 volts. Forward voltage of -1.2 volts suitable for power applications. Surface mount (SMT) design for easy PCB integration.
Explore Vishay MOSFETs and discrete semiconductors on EnvMart for reliable, high-performance electronic components fitting diverse industrial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 amperes.
This MOSFET has a maximum drain-source voltage rating of 20 volts.
It features a low maximum drain-source resistance of 100 milliohms, which helps reduce conduction losses.
The maximum power dissipation for this MOSFET is up to 2.8 watts.
It operates over a wide temperature range from -55°C to +150°C.
The dimensions of the SC-70 package are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The typical gate charge is 22 nanocoulombs at the specified gate-source voltage.
The maximum gate-source voltage ranges from -10 to +10 volts.
The forward voltage of this model is -1.2 volts.
This device features a P-channel enhancement mode for controlled conduction.
This MOSFET has a pin count of 6.
It is designed for surface mount (SMT) integration.
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