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Vishay P-Channel MOSFET 44 A 8 V Enhancement 3-Pin SOT-23 SI2305CDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2305CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2305CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.4A |
| Maximum Drain Source Voltage Vds | 8V |
| Maximum Drain Source Resistance Rds | 35mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 20nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- Maximum continuous drain current of 4.4 A ensures reliable current handling.
- Operates at a maximum drain-source voltage of 8 V for low voltage applications.
- Enhancement mode channel operation for improved switching performance.
- Low drain-source resistance of 35 milliohm leads to higher efficiency.
- Maximum power dissipation rating of 960 mW sustains device reliability under load.
- Wide operating temperature range from -55°C to 150°C supports harsh environment use.
- Compact package dimensions with length 3.04 mm, width 1.4 mm, and height 1.02 mm.
- Typical gate charge of 20 nC at gate-source voltage ensures fast switching.
Product Description
The Vishay SI2305CDS-T1-GE3 is a high-quality P-Channel MOSFET built for surface-mount applications. Featuring a low on-resistance of 35 milliohm and a maximum continuous drain current rating of 4.4 amps, it provides efficient switching and power handling capabilities that suit a variety of electronic applications.
Its enhancement-mode channel ensures that the device is off at zero gate voltage, offering improved control and energy efficiency in power management systems. The MOSFET is packaged in a compact SOT-23 3-pin configuration, allowing for space-saving PCB layouts in modern designs.
This MOSFET supports a maximum drain-source voltage of 8 volts, making it ideal for low voltage switching and control tasks in electronics equipment. With a power dissipation capability of up to 960 milliwatts, the device remains reliable under typical operating conditions.
The operating temperature range from -55°C to 150°C makes the SI2305CDS-T1-GE3 suitable for applications exposed to extreme temperature variations, common in automotive, industrial, and consumer electronics environments.
The typical gate charge of 20 nanocoulombs ensures rapid switching, enabling the device to efficiently handle dynamic load demands. Forward voltage of -1.2 volts complements its electrical characteristics for enhanced performance.
Manufactured in China under strict quality standards, the Vishay SI2305CDS-T1-GE3 MOSFET is a dependable component for engineers requiring a compact, low resistance, high efficiency P-channel MOSFET.
Maximum continuous drain current: 4.4 A. Drain-source voltage rating: 8 V. Low on-resistance: 35 mΩ. Compact SOT-23 package, surface mount. Power dissipation: 960 mW. Operating temperature range: -55°C to 150°C. Gate charge: 20 nC.
Enhancement type channel operation. Forward voltage: -1.2 V. 3 pins for easy integration. Ideal for industrial, automotive, power management, and consumer electronic applications. Explore more MOSFET devices on EnvMart for your electronic component requirements.
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Frequently Asked Questions
The maximum continuous drain current for the Vishay SI2305CDS-T1-GE3 is 4.4 A.
This model operates at a maximum drain-source voltage of 8 V, suitable for low voltage applications.
The SI2305CDS-T1-GE3 features a low on-resistance of 35 milliohm, contributing to higher efficiency.
It has a maximum power dissipation rating of 960 mW, ensuring reliability under load conditions.
The operating temperature range is from -55°C to 150°C, making it suitable for harsh environments.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
This model uses an enhancement mode channel, which ensures it is off at zero gate voltage.
The typical gate charge is 20 nC at gate-source voltage, allowing for fast switching performance.
The forward voltage is -1.2 V, which complements its electrical characteristics.
This device has 3 pins, facilitating easy integration into circuits.
It is manufactured in China under strict quality standards.
This model is suitable for industrial, automotive, power management, and consumer electronic applications.
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