Vishay P-Channel MOSFET 50 A, 60 V, Enhancement Mode, 3-Pin TO-252 SUD50P06-15-GE3

The Vishay SUD50P06-15-GE3 is a P-Channel MOSFET designed for high-performance switching applications within electronic circuits. It delivers a maximum continuous drain current of 50 amperes and withstands a maximum drain-source voltage of 60 volts, making it suitable for power management and load switching in industrial, consumer electronics, and power supply systems.

This enhancement mode device is housed in a compact TO-252 3-pin surface mount package, enabling efficient PCB layout and thermal management. It features a low maximum drain-source resistance of 28 milliohms that minimizes conduction losses, enhancing overall circuit efficiency. The device supports operation across a wide temperature range from -55°C minimum to 150°C maximum, suitable for demanding environmental conditions.

Its maximum power dissipation rating of 113 watts allows it to handle substantial power loads without degradation, further supporting high reliability in industrial and manufacturing setups. The typical gate charge of 110 nanocoulombs at 10 volts gate-source voltage facilitates rapid switching, critical in switching regulators and DC-DC converters.

The MOSFET's dimensions are 6.73 mm length, 6.22 mm width, and 2.38 mm height, making it optimized for space-constrained designs. It does not hold specific automotive or standards approvals, positioning it for general embedded electronics and power applications.

Key suitability includes industrial automation, power supplies, motor control, and other electrical systems requiring robust, high-current switching elements. The surface mount mounting type ensures compatibility with modern PCB assembly processes.

Offers enhancement mode channel operation for efficient switching. Compact 3-pin TO-252 surface mount package. High continuous drain current capacity of 50 amperes. Wide operating temperature range from -55°C to 150°C. High power dissipation rated at 113 watts.

Low maximum drain-source resistance of 28 milliohms. Typical gate charge of 110 nanocoulombs supports fast switching. Dimensions are 6.73 x 6.22 x 2.38 mm for space-saving layout. Ideal for industrial, consumer electronics, and power supply applications.

Explore Vishay MOSFETs in the Semiconductor category at EnvMart for advanced power management components suited for rigorous electronic and electrical engineering needs.