Vishay P-Channel MOSFET 6.5 A, 200 V Enhancement, 3-Pin TO-263 IRF9630SPBF

Vishay IRF9630SPBF is a high-quality P-Channel MOSFET designed for efficient power switching and amplification applications. It features a maximum continuous drain current of 6.5 A and can handle drain-source voltages up to 200 V. The device is housed in a 3-pin TO-263 surface mount package, offering compactness and ease of PCB integration for industrial, automotive, and power management systems.

Built with enhancement mode channel operation, this MOSFET is suitable for various electronic applications requiring switching or amplification with reliable electrical and thermal performance. Its low drain-source resistance of 800 milliohms minimizes conduction losses, improving overall circuit efficiency. The typical gate charge of 29 nC at Vgs supports fast switching speeds essential for modern power electronics.

Operating temperatures ranging from -55°C to 150°C assure dependable function in harsh and variable environmental conditions. The device’s gate-source voltage rating extends to ±20 V, providing resilience against voltage spikes. Dimensionally, it is 10.67 mm in length, 9.02 mm wide, and 4.83 mm in height, fitting into compact layouts.

This MOSFET finds extensive use in industrial power supplies, automotive electronics, switch-mode power converters, and other electronic components requiring robust, efficient semiconductor devices. Provided in tubes ready for insertion, it facilitates streamlined production workflows in electronics manufacturing.

Type P channel MOSFET with enhancement mode operation. Maximum continuous drain current of 6.5 A for reliable performance. Maximum drain-source voltage of 200 V suited for power switching applications. 3-pin surface mount TO-263 package for compact installation.

Maximum power dissipation of 3 W to manage thermal conditions. Low drain-source resistance of 800 milliohms enhancing efficiency. Typical gate charge of 29 nC at Vgs ensures fast switching. Wide operating temperature range from -55°C to 150°C.

Maximum gate-source voltage rating of ±20 V for protection. Device length 10.67 mm, width 9.02 mm, height 4.83 mm ensures space-efficient design. Explore the Vishay MOSFET category at EnvMart for advanced semiconductor components optimized for power and control applications.