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DiodesZetex P-Channel MOSFET Enhancement Mode 6.4 A 40 V 4-Pin SOT-223 ZXMP4A16GTA

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DiodesZetex P-Channel MOSFET Enhancement Mode 6.4 A 40 V 4-Pin SOT-223 ZXMP4A16GTA

Name: DiodesZetex P-Channel MOSFET Enhancement Mode 6.4 A 40 V 4-Pin SOT-223 ZXMP4A16GTA
Brand: DiodesZetex
SKU: 217478
Price: 0.65 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.8mm
Length	6.7mm
Model	ZXMP4A16GTA
Width	3.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	6.4A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	100mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	3.9W
Typical Gate Charge Qg @ Vgs	26.1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET features a maximum continuous drain current of 6.4 amperes.
It supports a maximum drain-source voltage of 40 volts.
The device operates in enhancement channel mode with a maximum power dissipation of 3.9 watts.
Typical gate charge at Vgs is 26.1 nanocoulombs ensuring efficient switching.
Operating temperature ranges from -55°C to 150°C for broad application versatility.
The package type is SOT-223 with a compact 4-pin configuration.
Maximum gate-source voltage is rated at -20 to +20 volts for robust voltage tolerance.
The device has a low on-resistance of 100 milliohms ensuring minimal conduction losses.

Product Description

DiodesZetex ZXMP4A16GTA is a P-Channel enhancement mode MOSFET designed to handle continuous drain currents up to 6.4 amperes with a maximum drain-source voltage of 40 volts. Encapsulated in a compact 4-pin SOT-223 package, this device is ideal for surface mount applications in industrial, automotive, and consumer electronic circuits.

The MOSFET features a maximum power dissipation rating of 3.9 watts, allowing it to efficiently manage thermal loads in moderate power conditions. Its typical gate charge of 26.1 nanocoulombs at the gate-source voltage ensures low switching losses, enhancing the device's performance in PWM and power management circuits.

Designed for reliable operation in harsh environments, the device supports a wide ambient temperature range from -55°C to 150°C. Its maximum gate-source voltage rating of -20V to +20V provides high tolerance for overvoltage situations.

Physical dimensions of 1.8 mm in height, 6.7 mm in length, and 3.7 mm in width support compact PCB layouts while maintaining ease of handling and assembly. The low maximum drain-source resistance of 100 milliohms contributes to reduced conduction losses, improving overall circuit efficiency.

This MOSFET meets automotive AEC-Q101 standards, confirming its suitability for use in automotive electronic systems requiring high reliability and stringent quality standards. This 4-pin SOT-223 packaged MOSFET is optimized for surface mount assembly.

Supports industrial, automotive, and power management applications. Enables efficient switching in DC-DC converters and load switching circuits. Designed for extended operating temperature ranges in demanding environments.

Compact dimensions promote space-saving circuit board design. Compliance with automotive AEC-Q101 standard ensures quality and reliability. Explore more industrial semiconductor solutions and reliable MOSFET devices at EnvMart to enhance your electronic designs and manufacturing capabilities.