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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 800μm |
| Length | 1.7mm |
| Model | 2N7002T-7-F |
| Width | 850μm |
| Mount Type | Surface |
| Series | 2N7002 |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-89 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 115mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.4V |
DiodesZetex 2N7002T-7-F is an N-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 115 mA and a maximum drain source voltage of 60 V. Packaged in a 3-pin SC-89 surface mount package, this device is designed to deliver efficient switching performance in a compact form factor.
Its low maximum drain source resistance of 13.5 Ω enables efficient conduction, while the maximum power dissipation of 150 mW ensures the device can sustain operational stress during application. It supports a wide operating temperature range from -55 degrees Celsius to 150 degrees Celsius, making it suitable for demanding industrial and automotive environments.
The device features a maximum gate source voltage rating of -20 V to +20 V, allowing for robust gate control in various circuitry designs. Its small size, measuring approximately 1.7 mm in length, 850 μm in width, and 800 μm in height, makes it an ideal choice for surface mount manufacturing processes where space efficiency is critical.
This MOSFET meets the automotive standard AEC-Q101, certifying it for automotive system reliability. It is typically used in electronic circuits requiring efficient switching and power management, including industrial control, automotive, and consumer electronics applications.
With its enhancement mode channel, the 2N7002T-7-F supports reliable and efficient electronic switching, especially in low power applications. The device is RoHS compliant, ensuring environmental safety and compliance with international regulations.
Features enhancement mode channel for efficient switching. Maximum power dissipation is rated at 150 mW for reliable operation. Designed for a wide operating temperature range from -55°C to 150°C. Maximum gate source voltage rating of -20 V to +20 V ensures robust gate control.
Compact dimensions approximately 1.7 mm length by 850 μm width and 800 μm height. Low drain source resistance of 13.5 Ω supports efficient current flow. Forward voltage drop of 1.4 V under specified conditions. Compliant with automotive standard AEC-Q101 for enhanced reliability.
Surface mount design suited for automated high-volume production. Explore more high-quality semiconductor products and components at EnvMart for your industrial, automotive, and electronic design needs.
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