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DiodesZetex N-Channel MOSFET 60 V 1.2 A Surface Mount 3-Pin SOT-23 Enhancement ZXMN6A07FTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1mm
Length 3.05mm
Model ZXMN6A07FTA
Width 1.4mm
Mount Type Surface
Series ZXMN6A07F
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 1.2A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 450mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 806mW
Typical Gate Charge Qg @ Vgs 3.2nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 950mV

Key Features

  • Enhancement mode MOSFET with surface mount design.
  • Maximum power dissipation of 806 mW for reliable operation.
  • High drain-source resistance of 450 mΩ for efficient switching.
  • Operating temperature range from -55°C to 150°C.
  • Typical gate charge is 3.2 nC at Vgs.
  • Maximum gate-source voltage ratings of -20 to +20 V.
  • Compliant with automotive standard AEC-Q101.
  • Optimized for use in electronic power and semiconductor applications.

Product Description

DiodesZetex ZXMN6A07FTA is an N-Channel Enhancement mode MOSFET designed for low voltage power switching applications. It features a maximum continuous drain current of 1.2 A and a drain-source voltage rating of 60 V housed in a small 3-pin SOT-23 surface mount package. Its compact size with dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height make it suitable for densely packed electronic circuits.

This MOSFET supports a maximum power dissipation of 806 mW ensuring effective thermal management in compact designs. It operates reliably across a wide temperature range from -55°C up to 150°C, suitable for automotive and industrial environments.

The device exhibits a maximum drain-source resistance of 450 mΩ, contributing to efficient operation with minimal conduction losses. A typical gate charge of 3.2 nC at gate-source voltage improves switching speed and performance for power management applications.

Rated with maximum gate-source voltage tolerance of -20 V to +20 V, it provides robust operation against voltage stress. The ZXMN6A07FTA conforms to the automotive testing standard AEC-Q101, endorsing quality and reliability for automotive electronics.

Commonly used in power conversion, battery management, and load switching electronic components, this MOSFET supports designs requiring tight space and low power dissipation. Its surface mount package facilitates automated assembly processes.

Enhancement mode N-Channel MOSFET with surface mount package. 1.2 A maximum continuous drain current and 60 V maximum drain-source voltage. Power dissipation up to 806 mW with compact SOT-23 package. Operating temperature range between -55°C and 150°C to cover harsh environments.

Low drain-source resistance of 450 mΩ ensures efficient conduction. Typical gate charge of 3.2 nC improves switching performance. Tolerates maximum gate-source voltages of ±20 V. Manufactured to meet automotive standard AEC-Q101.

This semiconductor component is essential for power management in industrial, automotive, and electronic systems, offering efficient, reliable switching capabilities. Embrace high-quality semiconductor solutions with DiodesZetex MOSFETs for your design needs.

Explore the extensive selection of semiconductor devices and MOSFETs available at EnvMart for diverse electronic and power management applications.

DiodesZetex N-Channel MOSFET 60 V 1.2 A Surface Mount 3-Pin SOT-23 Enhancement ZXMN6A07FTA
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.2 A.

It has a maximum drain-source voltage rating of 60 V.

The operating temperature range is from -55°C to 150°C.

This model comes in a SOT-23 surface mount package.

The maximum power dissipation is 806 mW.

The typical gate charge is 3.2 nC at Vgs.

The maximum gate-source voltage ratings are -20 V to +20 V.

It exhibits a maximum drain-source resistance of 450 mΩ.

Yes, it is compliant with the automotive standard AEC-Q101.

The dimensions are 3.05 mm in length, 1.4 mm in width, and 1 mm in height.

It is an N-Channel Enhancement mode MOSFET.

It is commonly used in power conversion, battery management, and load switching applications.

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