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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMN6A07FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | ZXMN6A07F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.2A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 450mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 3.2nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 950mV |
DiodesZetex ZXMN6A07FTA is an N-Channel Enhancement mode MOSFET designed for low voltage power switching applications. It features a maximum continuous drain current of 1.2 A and a drain-source voltage rating of 60 V housed in a small 3-pin SOT-23 surface mount package. Its compact size with dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height make it suitable for densely packed electronic circuits.
This MOSFET supports a maximum power dissipation of 806 mW ensuring effective thermal management in compact designs. It operates reliably across a wide temperature range from -55°C up to 150°C, suitable for automotive and industrial environments.
The device exhibits a maximum drain-source resistance of 450 mΩ, contributing to efficient operation with minimal conduction losses. A typical gate charge of 3.2 nC at gate-source voltage improves switching speed and performance for power management applications.
Rated with maximum gate-source voltage tolerance of -20 V to +20 V, it provides robust operation against voltage stress. The ZXMN6A07FTA conforms to the automotive testing standard AEC-Q101, endorsing quality and reliability for automotive electronics.
Commonly used in power conversion, battery management, and load switching electronic components, this MOSFET supports designs requiring tight space and low power dissipation. Its surface mount package facilitates automated assembly processes.
Enhancement mode N-Channel MOSFET with surface mount package. 1.2 A maximum continuous drain current and 60 V maximum drain-source voltage. Power dissipation up to 806 mW with compact SOT-23 package. Operating temperature range between -55°C and 150°C to cover harsh environments.
Low drain-source resistance of 450 mΩ ensures efficient conduction. Typical gate charge of 3.2 nC improves switching performance. Tolerates maximum gate-source voltages of ±20 V. Manufactured to meet automotive standard AEC-Q101.
This semiconductor component is essential for power management in industrial, automotive, and electronic systems, offering efficient, reliable switching capabilities. Embrace high-quality semiconductor solutions with DiodesZetex MOSFETs for your design needs.
Explore the extensive selection of semiconductor devices and MOSFETs available at EnvMart for diverse electronic and power management applications.
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