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Vishay Single N-Channel Power MOSFET 5.2 A 200 V TO-220AB IRL620PBF

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Vishay Single N-Channel Power MOSFET 5.2 A 200 V TO-220AB IRL620PBF

Name: Vishay Single N-Channel Power MOSFET 5.2 A 200 V TO-220AB IRL620PBF
Brand: Vishay
SKU: 155030
Price: 0.6 USD
Availability: InStock

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Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin	China
Brand	Vishay
Height	6.48mm
Length	14.4mm
Model	IRL620PBF
Width	10.52mm
Maximum Operating Temperature	150°C
Package Type	TO-220AB
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS 2002/95/EC
Channel Type	N
Maximum Continuous Drain Current Id	5.2A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	0.8Ω
Maximum Power Dissipation Pd	50W
Typical Gate Charge Qg @ Vgs	16nC
Maximum Gate Source Voltage Vgs	10V
Transistor Configuration	Single

Key Features

Features single transistor configuration in TO-220AB package.
Maximum drain-source resistance of 0.8 ohms at 5 V gate drive ensures efficient conduction.
Supports gate-source voltage up to 10 V for enhanced switching control.
Operates reliably between -55°C and 150°C operating temperatures.
Typical gate charge is 16 nC at Vgs, enabling fast switching.
Maximum power dissipation of 50 W suitable for compact power electronics.
Designed for logic-level gate drive applications to reduce control power requirements.
Dynamic dV/dt rating and repetitive avalanche rated for robustness.

Product Description

Vishay IRL620PBF is a high-performance single N-channel power MOSFET designed for power switching applications demanding efficient conduction and fast switching.

It features a maximum continuous drain current of 5.2 A and a maximum drain-source voltage of 200 V, packed in a TO-220AB package which facilitates easy mounting and thermal management.

The device provides a low maximum drain-source resistance of 0.8 ohms at 5 V gate voltage, ensuring minimal power loss and heat generation during operation.

Capable of operating in harsh environmental temperatures ranging from -55°C up to 150°C, the IRL620PBF is practical for use in various industrial electronics, automotive, and consumer product applications where reliable switching is critical.

The transistor supports a maximum gate-source voltage of 10 V and typical gate charge of 16 nC, enabling efficient and fast switching performance. Additional features include dynamic dV/dt rating and repetitive avalanche robustness, ensuring durability in high-speed switching environments.

This MOSFET is compliant with RoHS 2002/95/EC standards, reflecting Vishay's commitment to environmental regulations. Single transistor configuration in TO-220AB package. 5.2 A maximum continuous drain current and 200 V maximum drain-source voltage.

Low drain-source resistance of 0.8 Ω at 5 V gate drive voltage. Operating temperature range from -55°C to 150°C. Maximum power dissipation of 50 W for sustained use. Typical gate charge of 16 nC enables fast switching. Suitable for logic level gate drive applications.

Repetitive avalanche rated and dynamic dV/dt rated for reliability. RoHS compliant, manufactured in China.

This product is widely used in industrial electronics, laboratory equipment, automotive control electronics, and power management solutions requiring efficient MOSFET switching components. Vishay offers extensive technical support and documentation including datasheets, RoHS certificates, and conformity statements for the IRL620PBF MOSFET.

EnvMart provides this Vishay IRL620PBF MOSFET as a trusted solution for engineers and designers needing a dependable N-channel Power MOSFET with balanced voltage and current ratings in a compact package.