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Nexperia N-Channel MOSFET 12.8 A 60 V Enhancement Surface Mount LFPAK 4-Pin BUK9M85-60EX
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 900μm |
| Length | 3.4mm |
| Model | BUK9M85-60EX |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | BUK9M8560E |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12.8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 192mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 31W |
| Typical Gate Charge Qg @ Vgs | 4.4nC |
| Maximum Gate Source Voltage Vgs | 15V |
Key Features
- This enhancement mode MOSFET features a low on-resistance of 192 milliohms for efficient power control.
- The surface mount 4-pin LFPAK package enables easy PCB integration in compact designs.
- It supports a maximum power dissipation of 31 watts, suitable for high-performance switching.
- Operates reliably at temperatures ranging from -55°C to 175°C, meeting AEC-Q101 automotive standards.
- True logic level gate with a typical gate charge of 4.4nC ensures fast switching and minimal drive power.
- This MOSFET is rated for repetitive avalanche and thermally demanding environments, enhancing device durability.
Product Description
Nexperia BUK9M85-60EX is a high-performance N-channel MOSFET designed for automotive and industrial applications requiring efficient power switching. It features a maximum continuous drain current of 12.8 A, a drain-source voltage of 60 V, and an enhancement mode channel for precise control. Encapsulated in a 4-pin LFPAK surface mount package, it is ideal for compact PCB assembly and high-density electronic circuits.
The MOSFET’s low on-resistance of 192 milliohms contributes to reduced conduction losses and improved energy efficiency. With power dissipation capability up to 31 W and operational temperature range from -55°C to 175°C, the device is suitable for thermally demanding environments and robust automotive system designs adhering to AEC-Q101 standards.
This component offers a true logic-level gate with a typical gate charge of 4.4 nC, enabling fast switching speeds with low gate drive requirements. Its repetitive avalanche rating enhances reliability in applications involving inductive loads such as motors, lamps, and solenoid controls.
Common industrial and automotive uses include power management in 12 V automotive systems, transmission control modules, and other high-performance switching scenarios demanding small footprint and high thermal tolerance.
This MOSFET supports automotive-grade reliability conforming to AEC-Q101 qualification. Designed using TrenchMOS technology for improved performance and efficiency. Surface mount LFPAK package facilitates streamlined assembly in electronics manufacturing.
Typical gate charge of 4.4nC ensures low switching losses. Operating temperature range from -55°C to 175°C enhances versatility across varied environmental conditions.
Set includes one Nexperia BUK9M85-60EX N-Channel MOSFET packaged as per industrial standards. This new product is ideal for electronic component distributors, designers in power electronics, industrial controller manufacturers, and automotive system integrators seeking high reliability and performance.
Explore more semiconductor products and power MOSFET options at EnvMart for comprehensive solutions tailored to your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12.8 A.
The maximum drain-source voltage is 60 V.
It features a low on-resistance of 192 milliohms.
The device can dissipate a maximum power of 31 watts.
It operates reliably within a temperature range of -55°C to 175°C.
This model is encapsulated in a 4-pin LFPAK surface mount package.
It complies with the AEC-Q101 automotive standard.
The typical gate charge is 4.4 nC.
The height is 900 μm, and the width is 2.6 mm.
It is suitable for automotive and industrial applications requiring efficient power switching, such as power management in 12 V automotive systems.
This model features an N-channel type.
The maximum gate-source voltage is 15 V.
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