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Infineon HEXFET N-Channel MOSFET 150 A 30 V Enhancement Mode 3-Pin TO-220 IRL7833PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRL7833PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 150A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 32nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- This N-Channel power MOSFET features a low maximum drain source resistance of 4 milliohms for efficient conduction.
- Capable of dissipating 140 W of power with a maximum operating temperature of 175°C.
- Designed with a typical gate charge of 32 nC at gate-source voltage, ensuring fast switching.
- Supports a maximum gate-source voltage rating of -20 to +20 V, enhancing reliability.
- The compact 3-pin TO-220 package facilitates easy through-hole mounting and thermal management.
- Operates reliably across a broad temperature range from -55°C to 175°C.
- Infineon's HEXFET series ensures high system efficiency by minimizing conduction losses.
Product Description
Infineon IRL7833PBF is a high-performance HEXFET N-Channel power MOSFET designed for electronic applications demanding high current and low voltage operation. It supports a maximum continuous drain current of 150 A at a maximum drain-source voltage of 30 V. Packaged in a 3-pin TO-220 form factor, it is suitable for through-hole mounting, offering effective heat dissipation through its robust design.
The device operates in enhancement mode with a very low maximum drain-source resistance (Rds) of 4 milliohms, which reduces conduction losses and improves overall energy efficiency in circuits. It can dissipate up to 140 W of power and withstands operating temperatures from -55°C to 175°C, making it reliable across demanding industrial and commercial environments.
The typical gate charge of 32 nC at Vgs ensures fast switching capabilities, critical in power management and switching applications. The gate-source voltage tolerance of -20 V to +20 V provides enhanced reliability under various voltage stresses.
With a height of 8.77 mm, length of 10.54 mm, and width of 4.69 mm, the compact TO-220 package facilitates easy integration into power electronics, industrial controls, automotive systems, and other high-efficiency power management solutions.
Infineon's HEXFET MOSFETs are engineered to deliver benchmark on-resistance performance tailored for optimizing system efficiency in industrial, laboratory, manufacturing, HVAC, and automotive applications.
This product is a new, original Infineon part ideal for demanding power conversion and switching circuits. Its robust thermal and electrical characteristics suit applications requiring high current loads with minimal power loss.
Choose Infineon IRL7833PBF N-Channel MOSFET for reliable, high-efficiency power management in diverse electronic and power electronics applications. Explore other Infineon semiconductor components and industrial power solutions at EnvMart to enhance your project performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 150 A.
It has a maximum drain-source voltage rating of 30 V.
This unit can dissipate up to 140 W of power.
It is packaged in a 3-pin TO-220 form factor, suitable for through-hole mounting.
The maximum operating temperature is 175°C.
The typical gate charge is 32 nC at the gate-source voltage.
The minimum operating temperature is -55°C.
It supports a maximum gate-source voltage rating of -20 V to +20 V.
The maximum drain-source resistance is 4 milliohms.
The dimensions are height 8.77 mm, length 10.54 mm, and width 4.69 mm.
It is suitable for power management and switching applications in industrial, automotive, and commercial environments.
This model features an N-channel configuration.
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