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Infineon HEXFET N-Channel MOSFET 51 A 55 V Enhancement 3-Pin TO-220 IRFZ44ZPBF

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Infineon HEXFET N-Channel MOSFET 51 A 55 V Enhancement 3-Pin TO-220 IRFZ44ZPBF

Name: Infineon HEXFET N-Channel MOSFET 51 A 55 V Enhancement 3-Pin TO-220 IRFZ44ZPBF
Brand: Infineon
SKU: 212971
Price: 0.8 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	Mexico
Brand	Infineon
Height	8.77mm
Length	10mm
Model	IRFZ44ZPBF
Width	4.4mm
Mount Type	Through Hole
Series	HEXFET
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	51A
Maximum Drain Source Voltage Vds	55V
Maximum Drain Source Resistance Rds	14mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	80W
Typical Gate Charge Qg @ Vgs	29nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

High current capacity of 51 amperes for robust performance.
Maximum voltage rating of 55 volts suitable for various applications.
TO-220 through-hole mount package with 3 pins for easy PCB integration.
Enhancement mode channel for efficient switching control.
Low drain-source resistance of 14 milliohms minimizes power loss.
Maximum power dissipation capacity of 80 watts for thermal endurance.
Wide operating temperature range from -55°C to 175°C for reliability.
Typical gate charge of 29 nanocoulombs ensures fast switching response.

Product Description

Infineon IRFZ44ZPBF HEXFET N-Channel MOSFET is a high-performance enhancement mode transistor designed for power applications requiring a maximum continuous drain current of 51 A and a maximum drain-source voltage of 55 V. Packaged in a TO-220 through-hole form factor with 3 pins, it offers efficient conduction and switching performance for industrial, electronic, and power control circuits.

This MOSFET features a low maximum drain-source resistance of 14 milliohms which reduces conduction losses and improves overall system efficiency. Capable of dissipating up to 80 W power, it is suited to robust thermal management scenarios and demanding electrical loads.

Operating across a broad temperature range from -55°C to 175°C, the IRFZ44ZPBF provides stable functionality under extreme environmental conditions. Its typical gate charge of 29 nC supports fast switching speeds, and the gate-source voltage limits of ±20 V help prevent gate damage.

Compact physical dimensions enhance design flexibility, with the package measuring 10 mm in length, 4.4 mm in width, and 8.77 mm in height. This device is primarily used in power management, motor control, and switching regulators within industrial, automotive, and consumer electronics sectors.

High current capacity of 51 amperes for robust performance. Maximum voltage rating of 55 volts suitable for various applications. TO-220 through-hole mount package with 3 pins for easy PCB integration. Enhancement mode channel for efficient switching control.

Low drain-source resistance of 14 milliohms minimizes power loss. Maximum power dissipation capacity of 80 watts for thermal endurance. Wide operating temperature range from -55°C to 175°C for reliability. Typical gate charge of 29 nanocoulombs ensures fast switching response.

Maximum gate-source voltage of ±20 volts protects gate integrity. Compact dimensions: Length 10 mm, Width 4.4 mm, Height 8.77 mm for space-efficient design. Discover more electronic components and semiconductors at EnvMart for your industrial, manufacturing, and electronic design projects.