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onsemi P-Channel MOSFET 60 V, 2.6 A, 4-Pin SOT-223 Surface Mount NTF2955T1G

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onsemi P-Channel MOSFET 60 V, 2.6 A, 4-Pin SOT-223 Surface Mount NTF2955T1G

Name: onsemi P-Channel MOSFET 60 V, 2.6 A, 4-Pin SOT-223 Surface Mount NTF2955T1G
Brand: onsemi
SKU: 212440
Price: 0.82 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.57mm
Length	6.5mm
Model	NTF2955T1G
Width	3.5mm
Mount Type	Surface
Series	NTF
Maximum Operating Temperature	175°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	Type P
Maximum Continuous Drain Current Id	2.6A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	185mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.3W
Typical Gate Charge Qg @ Vgs	14.3nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

Features a maximum continuous drain current of 2.6 amperes.
Maximum drain-source voltage rated at 60 volts for robust operation.
Utilizes Enhancement channel mode for efficient switching.
Comes in a compact 4-pin SOT-223 package suitable for surface mount applications.
Has a maximum drain-source resistance of 185 milliohms ensuring low conduction loss.
Supports operating temperatures from -55°C up to 175°C.
Maximum power dissipation is 2.3 watts enabling reliable performance.
Typical gate charge of 14.3 nanocoulombs at Vgs, suitable for fast switching.

Product Description

onsemi NTF2955T1G P-Channel MOSFET is a high-performance discrete semiconductor that is designed for power switching applications. With a continuous drain current of 2.6 A and a maximum drain-source voltage of 60 V, this enhancement-mode MOSFET is ideal for usage in industrial, consumer electronics, power supply, and automotive applications.

Encapsulated in a 4-pin SOT-223 surface mount package, this device offers a balance of compact size and thermal performance. It delivers low on-resistance of 185 milliohms to minimize power losses and increase efficiency in switching circuits.

The MOSFET operates reliably over a wide temperature range from -55°C to 175°C and features a typical gate charge of 14.3 nC, ensuring rapid switching capabilities. The gate-source voltage tolerance ranges from -20 V to +20 V to protect against voltage spikes.

Physical dimensions measure 6.5 mm in length, 3.5 mm in width, and a height of 1.57 mm, making it suitable for compact PCB layouts where space optimization is critical.

Applications suited for this MOSFET include power management circuits, DC-DC converters, load switching, and general high-efficiency electronic switching modules in industrial and automotive domains.

Maximum continuous drain current of 2.6 A for robust power handling. Max voltage of 60 V ensuring wide operational flexibility. Enhancement mode channel for efficient electronic switching. Surface mount 4-pin SOT-223 packaging for easy PCB integration.

Low drain-source resistance of 185 mΩ reduces conduction losses. Wide operating temperature range from -55°C to 175°C for harsh environments. Maximum power dissipation of 2.3 W supports moderate power applications. Typical gate charge of 14.3 nC allows fast switching performance.

Gate-source voltage tolerance between -20 V and +20 V for protection. Compact size suitable for industrial and automotive electronics.

This product is a new, original onsemi semiconductor component engineered to meet demanding power switching requirements. Explore the Electronics & Electricals category on EnvMart for a comprehensive selection of MOSFETs and related semiconductor devices.