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onsemi P-Channel Enhancement MOSFET 1 A 20 V SOT-23 Package NDS332
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 940μm |
| Length | 2.92mm |
| Model | NDS332 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NDS332 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 300mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 3.7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-density DMOS technology optimizes on-state resistance and ruggedness.
- Maximum continuous drain current of 1 ampere supports moderate load applications.
- Enhancement mode device designed for fast switching in power management circuits.
- Compact SOT-23 surface mount package with 3 pins for efficient PCB integration.
- Wide operating temperature range from -55°C to 150°C for robustness.
- Applications include load switching, DC/DC converters, battery protection, and motor control.
- Maximum drain-source voltage rated at 20 volts for low-voltage power circuits.
- Maximum power dissipation of 500 milliwatts suitable for small signal tasks.
Product Description
onsemi NDS332 P-Channel Enhancement MOSFET in a compact SOT-23 package supports a maximum continuous drain current of 1 ampere and maximum drain-source voltage of 20 volts. This device employs ON Semiconductor's proprietary high-density DMOS technology which minimizes on-state resistance, offering robust, reliable fast switching suitable for modern electronic applications.
Designed as a voltage-controlled P-Channel small signal switch, the NDS332 features an enhancement mode channel and a 3-pin surface mount configuration optimized for automated manufacturing.
The MOSFET operates efficiently over a broad temperature range from -55°C minimum to 150°C maximum, making it suitable for demanding industrial and commercial environments.
Typical uses include load switching, DC/DC converter regulation, battery protection mechanisms, power management control, and DC motor driving circuits. The device ratings include a maximum drain-source resistance of 300 milliohms and maximum power dissipation of 500 milliwatts, supporting efficient energy management.
The gate voltage ratings are ±8 volts with a typical gate charge of 3.7 nanocoulombs, enabling precise and low-loss control signals. The forward voltage drop is approximately -1.2 volts during conduction. The physical dimensions include a length of 2.92 mm, width of 1.4 mm, and height of 940 micrometers, suitable for compact board layouts.
Voltage controlled P-Channel small signal switch for precise operation. High-density DMOS technology ensures low on resistance. 1 A continuous drain current supports moderate power applications. SOT-23 surface mount package with 3 pins for compact design.
Wide operating temperature suitability from -55°C to 150°C. Supports load switching, DC/DC converters, battery protection, and motor control. Maximum drain-source voltage of 20 V for low voltage circuits. Maximum power dissipation of 500 mW for reliable thermal performance.
Gate voltage range of ±8 V for stable operation. Compact physical size fits space-constrained layouts. This MOSFET is ideal for industrial electronics, power management, automotive electronics (non-automotive standard), manufacturing controls, and laboratory applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1 ampere, suitable for moderate load applications.
The maximum drain-source voltage rated for the NDS332 is 20 volts, making it suitable for low-voltage power circuits.
This model comes in a compact SOT-23 surface mount package with 3 pins, optimized for efficient PCB integration.
The NDS332 operates over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments.
The maximum power dissipation for this model is 500 milliwatts, suitable for small signal tasks.
The forward voltage drop for this MOSFET is approximately -1.2 volts during conduction.
The typical gate charge at a gate-source voltage of ±8 volts is 3.7 nanocoulombs.
This model features a P-Channel enhancement mode channel, designed for fast switching in power management circuits.
The dimensions of this model are 2.92 mm in length, 1.4 mm in width, and 940 micrometers in height.
This MOSFET is suitable for applications including load switching, DC/DC converters, battery protection, and motor control.
The maximum gate-source voltage ratings for this model are ±8 volts, ensuring stable operation.
The maximum drain-source resistance for this MOSFET is 300 milliohms, which supports efficient energy management.
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