onsemi Type P-Channel MOSFET, 900 mA, 30 V Enhancement Mode, 3-Pin SOT-23 Package NDS352AP

onsemi NDS352AP is a Type P-Channel MOSFET utilizing ON Semiconductor's proprietary high cell density DMOS technology. This device features a voltage-controlled small signal switch with a maximum continuous drain current of 900 mA in a compact 3-pin SOT-23 surface mount package. It operates with enhancement mode channel for rugged and reliable fast switching performance.

The device is designed to minimize on-state resistance, enhancing saturation current and overall efficiency. Its maximum drain-source voltage (Vds) rating is 30 volts, and it supports maximum power dissipation of 500 mW, suitable for a range of low power applications.

Operating temperature ranges from -55°C to 150°C ensure reliable performance in demanding industrial and commercial electronics environments. The typical gate charge of 2 nC at Vgs ensures fast switching with low gate drive power.

Applications include load switching, DC/DC converters, battery protection circuits, power management control, and DC motor control within electronic and power management systems. Voltage controlled P-Channel small signal switch for precise performance.

High-density DMOS cell design reduces on-state resistance. Max continuous drain current at 900 mA for robust load handling. Surface mount SOT-23 package enables compact PCB footprint. Wide operating temperature range from -55°C to 150°C for varied environments.

This MOSFET is ideal for industrial electronics, power management, telecommunications, automotive electronics (non-automotive standard), and consumer electronic products requiring efficient and reliable switching components.

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