onsemi Type P-Channel MOSFET, 2.4 A Continuous Drain Current, 20 V Drain Source Voltage, Enhancement Mode NTR4101PT1G

onsemi NTR4101PT1G is a Type P-Channel MOSFET designed for applications requiring a maximum continuous drain current of 2.4 amperes and a maximum drain-source voltage rating of 20 volts. Featuring an enhancement mode operation and housed in a compact 3-pin SOT-23 surface mount package, this device is suitable for use in various electronic circuits including power management and switching applications.

The MOSFET exhibits a low maximum drain-source resistance of 85 milliohms, enabling efficient conduction and energy saving in device operation. It maintains stable performance over a wide operating temperature range, from -55°C up to 150°C, which makes it suitable for demanding industrial, laboratory, and commercial environments.

The typical gate charge of 7.5 nanocoulombs facilitates fast switching speeds, which is essential for high-frequency applications. The gate-source voltage range of -8 volts to +8 volts allows precise gate control and safety against voltage spikes.

This onsemi transistor has physical dimensions compatible with modern compact electronics: length 2.9 mm, width 1.3 mm, and height 940 micrometers. It does not carry any specific automotive certification but is a reliable component for professional electronics design.

Typical uses include power management circuits, signal switching, and load driving in industrial, automotive (non-certified), laboratory, and electronic manufacturing contexts. The surface-mount package type simplifies PCB assembly and helps reduce assembly costs.

Technical documentation and design resources are available for this model to support engineering and product development teams in integrating the MOSFET into their designs. Compact SOT-23 package suitable for surface mounting applications.

Enhancement mode P-channel MOSFET operation for efficient switching. Maximum continuous drain current of 2.4 A for moderate power handling. Maximum drain-source voltage of 20 V for low voltage applications. Low maximum drain-source resistance of 85 mΩ improves conduction efficiency.

Supports operating temperature range from -55°C to 150°C. Typical gate charge of 7.5 nC ensures fast switching speeds. Maximum gate-source voltage of -8 V to +8 V for reliable gate control. Forward voltage drop of 1.6 V under load conditions.

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