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onsemi Type P-Channel MOSFET, 1.3 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin SOT-23 Surface NTR1P02LT1G

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onsemi Type P-Channel MOSFET, 1.3 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin SOT-23 Surface NTR1P02LT1G

Name: onsemi Type P-Channel MOSFET, 1.3 A Continuous Drain Current, 20 V Drain Source Voltage, 3-Pin SOT-23 Surface NTR1P02LT1G
Brand: onsemi
SKU: 157561
Price: 0.09 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	NTR1P02LT1G
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	1.3A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	350mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	400mW
Typical Gate Charge Qg @ Vgs	3.1nC
Maximum Gate Source Voltage Vgs	12V
Forward Voltage Vf	1V

Key Features

Designed for low RDS(on) to minimize power loss and improve efficiency.
Supports a maximum power dissipation of 400 mW for reliable operation.
Features enhancement mode channel for effective switching control.
Typical gate charge of 3.1 nC at Vgs for fast switching performance.
Operating temperature range from -55°C to 150°C for industrial applications.
Complies with automotive standard AEC-Q101 ensuring automotive quality and reliability.
Small size surface mount package saves board space.
Suitable for portable and battery-powered devices including computers and cordless phones.

Product Description

onsemi NTR1P02LT1G Type P-Channel MOSFET provides efficient power management with a maximum continuous drain current of 1.3 A and maximum drain source voltage of 20 V. Housed in a miniature 3-pin SOT-23 surface mount package, this device is optimized for low power loss applications.

This enhancement mode MOSFET exhibits a low RDS(on) of 350 milliohms which ensures high efficiency and extended battery life in portable electronic devices such as computers, printers, PCMCIA cards, and cellular or cordless telephones. Its compact size contributes to space-saving printed circuit board layouts.

Designed to dissipate up to 400 mW and operate reliably within a temperature range from -55°C to 150°C, this MOSFET suits demanding industrial, automotive, and consumer electronics environments. It meets the AEC-Q101 automotive standard, assuring quality and durability for automotive system applications.

The device features a typical gate charge of 3.1 nC at Vgs, allowing swift switching performance for use in DC-DC converters and power management circuits in portable and battery-powered products.

The SOT-23 surface mount package dimensions are compact with length 3.04 mm, width 1.4 mm, and height 1.01 mm, ideal for modern high-density circuit boards. Low RDS(on) for improved efficiency and reduced power loss. Compact SOT-23 surface mount package saves board space.

Enhancement mode operation for precise control. Wide operating temperature from -55°C to 150°C. Compliance with AEC-Q101 automotive qualification standard. Ideal for DC-DC converters in portable devices. Supports 1.3 A continuous drain current and 20 V drain-source voltage.

Typical gate charge 3.1 nC enabling fast switching.

This MOSFET is suitable for use in industrial, electronics manufacturing, automotive, and consumer electronics sectors requiring efficient power switching and management solutions. Explore EnvMart’s extensive semiconductor and MOSFET selections for complementary components and power management devices.