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onsemi QFET Type P-Channel MOSFET, 11.5 A, 200 V Enhancement Mode, 3-Pin TO-263 Package FQB12P20TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB12P20TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11.5A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 470mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.13W |
| Typical Gate Charge Qg @ Vgs | 31nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -5V |
Key Features
- This MOSFET is designed for voltage-controlled switching and optimized for surface mounting.
- It offers a maximum drain-source resistance of 470 milliohms for efficient conduction.
- The device supports a maximum power dissipation of 3.13 watts ensuring reliable operation under load.
- Operating temperature ranges from -55°C to 150°C suitable for industrial applications.
- Typical gate charge is 31 nanoCoulombs at Vgs, enabling fast switching performance.
- Maximum gate-source voltage tolerance is from -30 V to +30 V for robust input drive.
- Physical dimensions include a length of 10.67 mm, width of 9.65 mm, and height of 4.83 mm.
- Ideal for load switching, DC/DC converters, battery protection, power management control, and DC motor control.
Product Description
onsemi FQB12P20TM is a QFET Type P-Channel MOSFET designed with enhancement mode operation, capable of handling a continuous drain current of 11.5 amperes and a maximum drain-source voltage of 200 volts. Packaged in a TO-263 surface mount configuration with three pins, this device leverages ON Semiconductor's proprietary high cell density DMOS technology, providing low on-resistance and rugged, reliable switching characteristics.
Its robust electrical ratings include a maximum power dissipation of 3.13 watts and a wide operating temperature range from -55°C to 150°C, making it suitable for demanding industrial and commercial electronic applications.
The MOSFET features a maximum drain-source resistance of 470 milliohms, ensuring efficient conduction and minimal power loss. The typical gate charge of 31 nanoCoulombs allows for fast switching, which is valuable in high-frequency power circuits. It supports gate-source voltages ranging between -30 V and +30 V, providing strong gate protection margins.
Physically compact, the device measures 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, optimized for space-constrained PCB layouts.
Key applications include load switching, DC/DC converter circuits, battery protection schemes, power management control systems, and DC motor control, underscoring its versatility across industrial, manufacturing, automotive, and consumer electronics sectors.
This P-Channel MOSFET serves as a voltage-controlled switch enabling efficient load switch operations. Manufactured with high-density DMOS technology to reduce on-state resistance and improve reliability. The device delivers high saturation current capability suitable for power management tasks.
Designed for high-speed switching applications with superior ruggedness and durability. Suitable for a wide temperature range from sub-zero to elevated industrial temperatures. Compact 3-pin TO-263 package supports surface mount assembly methods.
Applications span load switching, DC/DC converters, battery protection, and motor control.
Explore the Electronics & Electricals category at EnvMart for a comprehensive range of semiconductors and MOSFET devices from leading brands such as onsemi for your electronic design and production needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11.5 A.
It can handle a maximum drain-source voltage of 200 V.
The maximum power dissipation rating is 3.13 W.
The typical gate charge at Vgs is 31 nC.
This model measures 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum gate-source voltage tolerance is from -30 V to +30 V.
The maximum drain-source resistance is 470 mΩ.
The operating temperature range is from -55°C to 150°C.
It uses a surface mount type for installation.
This MOSFET is suitable for load switching, DC/DC converters, battery protection, and power management control.
This model has a total of 3 pins.
It utilizes a P-Channel type.
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