onsemi PowerTrench Type P-Channel MOSFET 30 V 3.4 A Enhancement Mode 4-Pin SOT-223 FDT458P

onsemi FDT458P PowerTrench Type P-Channel MOSFET is a high-performance discrete semiconductor device optimized for power electronics applications. It features a 30 V maximum drain-source voltage and a continuous drain current rating of 3.4 A, ideal for efficient switching in power management circuits.

The device employs an advanced shielded-gate PowerTrench architecture, enabling low gate charge and low on-resistance. This results in reduced switching losses and improved power density, making it suitable for synchronous rectification in AC/DC power supplies, DC/DC converters, and other industrial electronics.

Encapsulated in a compact 4-pin SOT-223 surface mount package, the MOSFET measures 6.5 mm length, 3.56 mm width, and 1.6 mm height, allowing space-efficient PCB layouts. It delivers a maximum power dissipation of 3 W and operates reliably over a wide temperature range from -55°C up to 150°C, supporting demanding industrial and automotive environments.

The device has a low maximum drain-source resistance (Rds(on)) of 130 mΩ which reduces conduction losses in power circuits. Its enhancement mode operation ensures robust gate control with a maximum gate-source voltage of ±20 V and a typical gate charge of just 2.5 nC, facilitating fast switching performance while limiting power dissipation.

The integrated soft body diode characteristic improves switching behavior by eliminating the need for external snubber circuits and decreasing electromagnetic interference. Forward voltage drop is typically -1.2 V, contributing to higher system efficiency.

Advanced PowerTrench shielded-gate design ensures low on-resistance and efficient switching. Compact 4-pin SOT-223 package supports surface mounting on PCBs. High maximum power dissipation of 3 W enables moderate power handling.

Wide operating temperature range from -55°C to 150°C suits industrial applications. Low typical gate charge reduces switching losses and improves efficiency. Soft body diode improves synchronous rectification and reduces EMI.

Designed for reliable operation in power supplies, motor drives, and DC/DC converters.

This MOSFET is well suited for use in industrial power management, manufacturing controls, automotive electronics, and other commercial applications requiring efficient, compact power devices. Its features enable system designers to build reliable and energy-efficient electronic circuits with improved power density and thermal performance.

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