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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IRL1404STRLPBF |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type N |
| Maximum Continuous Drain Current Id | 160A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
Infineon IRL1404STRLPBF is a high-performance HEXFET Type N-Channel MOSFET engineered for power electronics and semiconductor applications. It supports a continuous drain current of 160 amperes and a maximum drain-source voltage of 40 volts, making it suitable for power switching and amplification tasks.
The device is packaged in a 3-pin TO-263 surface mount package, offering excellent thermal dissipation and ease of mounting on printed circuit boards. With a low maximum drain-source resistance of 4 milliohms, it provides efficient conduction with minimal losses.
This MOSFET features a typical gate charge of 140 nanoCoulombs at 10 V gate-source voltage, facilitating fast and efficient switching performance. Its maximum power dissipation rating is 200 watts, ensuring it can handle substantial power loads with a maximum junction temperature of 175°C. The MOSFET operates reliably across a wide temperature range from -55°C to 175°C.
Additional characteristics include a maximum gate-source voltage rating of 20 volts and a forward voltage of 1.3 volts. The device is lead-free, supporting environmental compliance and manufacturing standards without any automotive specific certifications.
This MOSFET is ideal for industrial, electronic, power supply, and manufacturing applications requiring robust performance, low conduction loss, and high current handling capabilities.
Designed with low on resistance for high efficiency. Capable of handling continuous drain current of up to 160 amperes. Maximum drain-source voltage rating of 40 volts. Typical gate charge of 140 nanoCoulombs at 10 V gate-source voltage.
Maximum power dissipation capacity of 200 watts for thermal stability. Wide operating temperature range from -55°C to 175°C junction temperature. Fast switching speed suitable for power applications. Surface mount package type TO-263 with 3 pins.
Lead-free and RoHS compliant construction. Explore the complete Infineon MOSFET range on EnvMart for electronic and industrial components.
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