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onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V Enhancement Mode, 8-Pin SOIC Package FDS6681Z

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onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V Enhancement Mode, 8-Pin SOIC Package FDS6681Z

Name: onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V Enhancement Mode, 8-Pin SOIC Package FDS6681Z
Brand: onsemi
SKU: 207554
Price: 1.8 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.5mm
Length	5mm
Model	FDS6681Z
Width	4mm
Mount Type	Surface
Series	PowerTrench
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	5mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	185nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	-1.2V

Key Features

This MOSFET utilizes PowerTrench technology for enhanced efficiency and power density.
It is designed with an enhancement mode channel and a shielded-gate structure for superior switching performance.
The device has low drain-source resistance (5 mΩ) allowing effective conduction.
Operating temperature ranges from -55°C to 150°C make it suited for industrial applications.
The package type is surface mount SOIC with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height.
The maximum power dissipation is rated at 2.5 W.
It supports gate-source voltage up to ±25 V, with a typical gate charge of 185 nC at Vgs.
The soft body diode design eliminates the need for additional snubber circuits.

Product Description

onsemi FDS6681Z PowerTrench Type P-Channel MOSFET is engineered for high efficiency and power density applications. Rated for a maximum continuous drain current of 20 A and a drain-source voltage of 30 V, this device is housed in an 8-pin SOIC surface-mount package measuring 5 mm by 4 mm by 1.5 mm. It employs a shielded-gate PowerTrench technology that ensures low gate charge and fast switching capabilities, ideal for synchronous rectification in AC/DC power supplies.

The enhancement mode MOSFET features a very low on-resistance of 5 milliohms, which minimizes conduction losses. The device can operate reliably within a temperature range from -55°C to 150°C, making it suitable for a variety of industrial and commercial semiconductor applications.

The robust design includes a soft recovery body diode, which facilitates soft switching and reduces electromagnetic interference, often eliminating the need for snubber circuits or higher voltage MOSFETs. The maximum power dissipation is 2.5 W, complementing its compact size.

This component supports gate-source voltages up to ±25 V and exhibits a forward voltage drop of approximately -1.2 V. The typical gate charge is 185 nC, contributing to efficient switching dynamics. It does not carry automotive standards approvals.

This PowerTrench P-Channel MOSFET offers system efficiency improvements and enhanced power density. Its shielded-gate design balances charge for reduced figure of merit (FOM) versus previous generations. Soft body diode function improves switching performance and circuit protection.

Compact SOIC package provides excellent board space savings for surface mount assembly. Operating temperature range supports demanding industrial and commercial electronics environments. Low Rds(on) and gate charge reduce loss and improve power conversion efficiency.

Suitable for industrial, electronic component manufacturing, power supply circuits, and semiconductor replacement projects. Discover more onsemi MOSFET devices and power management semiconductor solutions on EnvMart for optimized electronics applications.