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onsemi PowerTrench Type P-Channel MOSFET 8 A 20 V Enhancement 8-Pin SOIC FDS6375
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS6375 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET provides a maximum continuous drain current of 8 amperes.
- Its maximum drain-source voltage rating is 20 volts for reliable power switching.
- Designed with a low drain-source resistance of 24 milliohms for efficient conduction.
- Supports a maximum power dissipation of 2.5 watts under continuous operation.
- Operates safely across a temperature range from -55°C to 175°C maximum.
- Utilizes a shielded-gate PowerTrench design for improved switching performance.
- Typical gate charge is 26 nanocoulombs at Vgs, enhancing fast switch capability.
- Compact dimensions include 5mm length, 4mm width, and 1.5mm height.
Product Description
onsemi FDS6375 PowerTrench Type P-Channel MOSFET is a surface-mount device designed for efficient power management in electronic circuits, delivering 8 amperes continuous drain current and a maximum drain-source voltage of 20 volts. Featuring a shielded-gate structure, this enhancement mode MOSFET offers a low Rds(on) of 24 milliohms that optimizes conduction losses and increases system efficiency in synchronous rectification applications.
The device supports a maximum power dissipation of 2.5 watts, making it suitable for various industrial and commercial electronics applications including power supplies, DC-DC converters, and battery management systems. Its operating temperature range from -55°C to 175°C ensures high reliability in harsh environmental conditions.
Typical gate charge of 26 nanocoulombs contributes to fast switching speed and reduced switching losses, enhancing overall system performance. The FDS6375’s soft body diode also reduces noise and the need for additional snubber circuitry, simplifying design complexity.
The MOSFET is housed in an 8-pin SOIC package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, allowing integration into space-constrained circuit boards. Its surface mount type further facilitates automated assembly processes in electronics manufacturing.
This semiconductor device is widely used in industrial, automotive, communications, and consumer electronics sectors where efficient power switching and reliability are critical performance factors.
Set yourself up for optimized power control with the onsemi FDS6375 MOSFET, incorporating advanced PowerTrench technology for enhanced efficiency and durability. Maximum continuous drain current: 8 A. Maximum drain-source voltage: 20 V.
Drain-source resistance: 24 mΩ. Maximum power dissipation: 2.5 W. Operating temperature range: -55°C to 175°C. Typical gate charge: 26 nC. Package: 8-pin SOIC surface-mount. Dimensions: 5 mm x 4 mm x 1.5 mm (LxWxH). Explore further MOSFETs and discrete semiconductor solutions in EnvMart’s Electronics & Electricals category.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 8 amperes.
The maximum drain-source voltage rating is 20 volts.
The drain-source resistance (Rds(on)) is 24 milliohms.
It supports a maximum power dissipation of 2.5 watts under continuous operation.
The operating temperature range is from -55°C to 175°C.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
It is housed in an 8-pin SOIC surface-mount package.
The typical gate charge is 26 nanocoulombs at Vgs.
The channel type is P-Channel, and it operates in enhancement mode.
The maximum gate-source voltage is -8V to +8V.
It is suitable for various applications including power supplies, DC-DC converters, and battery management systems.
The country of origin for this MOSFET is India.
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