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Infineon HEXFET Type P-Channel MOSFET 5.4 A 30 V Enhancement 8-Pin SOIC IRF9335TRPBF

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Infineon HEXFET Type P-Channel MOSFET 5.4 A 30 V Enhancement 8-Pin SOIC IRF9335TRPBF

Name: Infineon HEXFET Type P-Channel MOSFET 5.4 A 30 V Enhancement 8-Pin SOIC IRF9335TRPBF
Brand: Infineon
SKU: 200615

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.5mm
Length	5mm
Model	IRF9335TRPBF
Width	4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	5.4A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	110mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2.5W
Typical Gate Charge Qg @ Vgs	9.1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.2V
P-Channel MOSFET, 5.4 A, 30 V, 8-Pin SOIC Infineon IRF9335PBFBrand	Infineon

Key Features

This device features a maximum continuous drain current of 5.4 amperes.
The maximum drain-source voltage is rated at 30 volts.
It uses the HEXFET series design for optimized conduction losses.
The package type is SOIC with 8 pins suitable for surface mounting.
The MOSFET operates in enhancement mode with a maximum power dissipation of 2.5 watts.
Operating temperature ranges from -55°C to 150°C ensuring wide environmental compatibility.
The maximum drain-source resistance is 110 milliohms minimizing energy loss.
Typical gate charge is 9.1 nanocoulombs for efficient switching performance.

Product Description

Infineon IRF9335TRPBF is a HEXFET Type P-Channel MOSFET designed for power management with a maximum continuous drain current of 5.4 A and a maximum drain-source voltage of 30 V. It comes in a surface mount 8-Pin SOIC package, allowing for easy integration in various electronic and industrial applications such as power supplies, motor controls, and load switching.

This enhancement mode MOSFET ensures low conduction losses with a maximum drain-source resistance of 110 mΩ, improving efficiency and thermal performance. It supports a max power dissipation of 2.5 W and operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments.

The gate charge of 9.1 nC supporting fast switching enhances circuit performance, while the gate-source voltage tolerance from -20 V to +20 V provides protection against overstress. Its compact 5 mm by 4 mm footprint with a height of 1.5 mm supports dense PCB layouts.

This MOSFET is ideal for industrial, automotive, and consumer electronics applications requiring efficient, compact, and reliable power switching components. The SOIC package facilitates automated assembly and excellent thermal dissipation.

Maximum continuous drain current of 5.4 A ensures handling of moderate loads efficiently. Maximum drain-source voltage of 30 V suits low-voltage power circuits. Low on-resistance of 110 mΩ reduces conduction losses and heat generation.

Enhanced HEXFET design provides superior performance in power switching. Wide operating temperature range from -55°C to 150°C for industrial use. Compact SOIC-8 package allows for space-saving board designs. Typical gate charge of 9.1 nC aids in fast and efficient switching.

Gate-source voltage rating of ±20 V protects against voltage spikes. Power dissipation rating of 2.5 W supports moderate power applications. Explore further power semiconductor options and related components available at EnvMart to meet various industrial and electronic design requirements.