Infineon HEXFET Type P-Channel MOSFET, 18 A Continuous Drain Current, 55 V Drain Source Voltage, Surface Mount IRFR5505TRPBF

Infineon IRFR5505TRPBF is a high-performance HEXFET P-Channel MOSFET designed for demanding electronic applications. With a maximum continuous drain current of 18 A and a maximum drain-source voltage of 55 V, this device suits power management tasks requiring reliable switching and low losses. The enhancement-mode channel ensures effective control, and the low drain-source resistance of 110 milliohms minimizes conduction losses, improving system efficiency.

The MOSFET is packaged in a compact TO-252 surface mount format with 3 pins, facilitating integration into modern PCB layouts. It supports a maximum power dissipation of 57 W and operates reliably within a temperature range from -55°C to 150°C, making it stable under varying industrial and commercial environmental conditions.

Typical gate charge of 32 nC allows for rapid switching speeds, enhancing performance in switching circuits. The device also tolerates gate-source voltages up to ±20 V, providing robustness against gate voltage transients. This MOSFET features a typical forward voltage of -1.6 V, which contributes to overall efficiency in power conversion systems.

Widely used in industrial electronics, power supplies, motor control, and automotive applications, the Infineon IRFR5505TRPBF delivers balanced electrical characteristics and practical form factor advantages. Its proven HEXFET technology provides high reliability and durability required for critical electronic infrastructure. Applications extend to industrial power management, HVAC control systems, and commercial electronic devices requiring efficient switching components.

The package dimensions include a length of 6.73 mm, width of 6.22 mm, and height of 2.39 mm, allowing compact PCB design and effective heat dissipation. The MOSFET does not carry automotive certification but meets general industrial standards for discrete semiconductor components.

Designed for high efficiency with HEXFET technology. Supports continuous drain current of 18 Amps. Maximum power dissipation of 57 Watts for robust performance. Operates between -55°C and 150°C temperature range. Low on-resistance of 110 milliohms reduces conduction loss.

Compact dimensions: length 6.73 mm, width 6.22 mm, height 2.39 mm. Typical gate charge of 32 nC ensures fast switching. 3-pin TO-252 package suitable for surface mounting. Maximum gate-source voltage rating of ±20 V to ensure reliable gate control.

Forward voltage of -1.6 V for efficient conduction in switching applications. Explore the Infineon MOSFET category on EnvMart to find compatible components and accessories for your electronic design needs.